The Japan Society of Applied Physics

473件中(91 - 100)

[C-5-3] A 90nm-node SOI Technology for RF Applications

Tatsuhiko Ikeda、Yuuichi Hirano、Toshiaki Iwamatsu、Daniel Chen、Tsutomu Yoshimura、Takashi Ipposhi、Shigeto Maegawa、Masahide Inuishi、Yuzuru Ohji (1.Advanced Device Development Dept., Renesas Technology Corp.、2.High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-7-3] Study of Mobility in Strained Silicon and Germanium Ultra Thin Body MOSFETs

Tony Low、Chen Shen、M. F. Li、Yee-Chia Yeo、Y. T. Hou、Chunxiang Zhu、Albert Chin、L. Chan、D. L. Kwong (1.Silicon Nano Device Lab (SNDL), ECE Department, National University of Singapore、2.Institute of Microelectronis、3.Technology Development, Chartered Semiconductor Manufacturing, Singapore、4.Dept Electronics Eng., National Chiao Tung Univ., Taiwan、5.Dept. Electrical and Computer Engineering, University of Texas)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

473件中(91 - 100)