587件中(441 - 450)

[P-2-10] Wireless Inter-Chip Signal Transmission by Electromagnetic Coupling of Open-Ring Resonators

Y. Okuyama¹、J. P. Ao¹、I. Awai²、Y. Ohno¹ (1.Univ. of Tokushima、2.Ryukoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-2-11] Impact of Dimension of Orthogonal Floating Shielding Lines beneath Coplanar Waveguide Transmission Line on Suppressing Substrate Effect

M. C. Tang¹、Y. K. Fang¹、T. Cheng²、W. S. Liao²、D. C. Chen²、C. S. Yeh²、S. C. Chien² (1.National Cheng Kung Univ.、2.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-2-12] Anodic Alumina Substrate using Via in Pad for Memory Package Applications

J. Jo¹、J. M. Yook¹、M. Kim² (1.KAIST、2.Kongju National Univ., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-2-13] Design of High-Q MIS-Varactors with Layout Modification

T. L. Li¹、S. Huang¹、B. Hung¹、C. Y. Tzeng¹、V. Liang¹、S. C. Chien¹ (1.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-2-14] Enhancement of Wafer Test Yield of CIS Device with MicroLens Formed by the Optimized LTO Film

K. Park¹、S. Ryu¹、J. Yang¹、S. Lee¹、M. Han¹、H. Choi¹、H. Lee¹、J. Han¹ (1.Dongbu HiTek Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-1] Novel Asymmetric SiGe/Strained-Silicon Heterojunction Channel MOSFET

G. Gupta¹、J. Woo¹ (1.UCLA, USA)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-2] Calculation of Strain Effects on the I-V Characteristics of Ultra Small MOSFETs based on NEGF Approach

H. Fitriawan¹、S. Souma¹、M. Ogawa¹ (1.Kobe Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-3] The Impact of Pre-Ion Implantation (PII) on the Characteristics of Nickel Germanide Films and NiGe/Ge Schottky Diodes

X. An¹、C. Fan¹、R. Huang¹、X. Zhang¹ (1.Peking Univ., China)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-4] Minority Carrier Response Characteristics in Germanium MOS Capacitor

C. C. Cheng¹、C. H. Chien^1,2、G. L. Luo²、H. C. Chiang¹、H. S. Chen¹、C. L. Lin¹、C. C. Kei³、C. N. Hsiao³、C. Y. Chang¹ (1.National Chiao Tung Univ.、2.National Nano Device Labs.、3.National Applied Res. Labs., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-5] Improved Analytic I-V Model of the Long-Channel Undoped Surrounding-Gate MOSFET

A. Son¹、J. Kim¹、N. Jeong¹、J. Choi²、H. Shin¹ (1.Ewha Womans Univ.、2.Hynix Semiconductor Inc., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

587件中(441 - 450)