[P-3-6] RF Small-Signal and Noise Modeling for SOI Dynamic Threshold Voltage MOSFETs

S. C. Wang^1,2、P. Su¹、K. M. Chen²、S. Y. Huang³、C. C. Hung³、V. Liang³、C. Y. Tzeng³、G. W. Huang² (1.National Chiao Tung Univ.、2.National Nano Device Labs.、3.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-7] Origin of Enhanced Impact Ionization in Strained-SiGe pMOSFETs

P. C. Huang¹、T. K. Kang²、Y. H. Sa²、S. L. Wu²、S. J. Chang¹ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-8] A Vertical-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Fully-Oxidized Silicon Beam Isolation

A. Sugimura¹、K. Okuyama¹、H. Sunami¹ (1.Hiroshima Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-9] Layout Dependence of SiGe Strain Effect and STI Induced Defects in 45nm p-PMOSFETs with Strain SiGe Source/Drain

C. Y. Cheng¹、Y. K. Fang¹、J. C. Hsieh²、Y. M. Sheu²、H. Hsia²、W. M. Chen²、S. S. Lin²、C. S. Hou² (1.National Cheng Kung Univ.、2.Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-10] Impact of Ge Content on Flicker Noise Behavior in Strained-SiGe pMOSFETs

C. W. Kuo¹、S. L. Wu²、H. Y. Lin¹、S. H. Chen¹、C. Y. Wu²、C. H. Lin²、S. J. Chang¹ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-11] Demonstration of High Mobility Holes in a Strained Ge Channel Grown on a Novel Thin and Relaxed SiGe/LT-SiGe/Si(001) Virtual Substrate

M. Myronov¹、D. R. Leadley¹、Y. Shiraki² (1.Univ. of Warwick, UK、2.Musashi Inst. of Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-12] Analysis of Threshold Voltage Variations of FinFETs : Separation of Short Channel Effects and Space Charge Effects

Y. Kobayashi¹、K. Tsutsui¹、K. Kakushima¹、P. Ahmet¹、V. R. Rao²、H. Iwai¹ (1.Tokyo Tech., Japan、2.Indian Inst. of Tech. Bombay, India)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-13] Extraction of Vertical, Lateral Locations and Energies of Hot-Electrons-Induced Traps Through the Random Telegraph Noise

D. Kang¹、S. Yang¹、J. Kim²、D. Lee²、B. G. Park¹、Y. Son¹、J. D. Lee¹、H. Shin¹ (1.Seoul National Univ.、2.Samsung Electronics Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-14] Hot-Carrier-Induced Degradation in P-type High-Voltage DEMOS Transistors

J. F. Chen¹、J. R. Lee¹、S. Y. Chen¹、K. S. Tian¹、K. M. Wu²、C. M. Liu² (1.National Cheng Kung Univ.、2.Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-15] Modeling of Substrate Current of MOSFETs under Different Gate Biases and Temperatures

S. Y. Chen¹、C. H. Tu¹、M. C. Wang^1,2、S. H. Wu³、Z. W. Jhou³、C. J. Chang³、J. Ko³、H. S. Haung¹ (1.National Taipei Univ. of Tech.、2.Minghsin Univ. of Sci. and Tech.、3.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

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