[B-5-2] Hot-Carrier AC Lifetime Enhancement due to Wire Resistance Effect (WRE) in 45nm CMOS Circuits

N. Mizuguchi¹、K. Takeuchi¹、H. Tobe¹、P. Lee¹、K. Ishibashi¹ (1.Renesas Tech. Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-3] Stress Memorization Technique (SMT) for pMOS by Dopant Confinement Layer (DCL)

H. Ohta¹、K. Ikeda¹、H. Fukutome¹、M. Tajima²、K. Okabe²、K. Ohkoshi²、S. Satoh¹ (1.Fujitsu Labs. Ltd.、2.Fujitsu Microelectronics Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-4] New High-Voltage and Reliable RF LDMOS Fabricated with Standard Foundry CMOS Technology

H. Xiao¹、R. Huang¹、L. Zhang¹、F. Song¹、Y. Ai¹、R. Wang¹、D. Wu¹、H. Liao¹、W. Wong²、Y. Wang¹ (1.Peking Univ.、2.SMIC, China)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-1] High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO₂ High-k Dielectric and Metal Gate

J. Oh¹、P. Majhi¹、C. Y. Kang¹、R. Jammy¹、R. Joe²、T. Sugawara²、Y. Akasaka²、T. Kaitsuka²、T. Arikado²、M. Tomoyasu² (1.SEMATECH, USA、2.Tokyo Electron Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-2] Thin-Metal Inserted Single-phase Ni-FUSI(MISF) and High-k Gate Stack for Productive LSTP CMOS Application

Y. Yamamoto¹、Y. Nishida¹、K. Satoh¹、T. Kawahara¹、S. Sakashita¹、M. Mizutani¹、S. Yamanari¹、Y. Ariyama¹、Y. Miyagawa¹、N. Murata¹、T. Sakai¹、M. Inoue¹、J. Yugami¹、S. Ogino¹、K. Eikyu¹、T. Hayashi¹、S. Endo¹、T. Yamashita¹、H. Oda¹、Y. Inoue¹、H. Fujimoto²、Y. Sato²、T. Oosuka²、A. Tsudumitani²、Y. Moriyama²、K. Nakanishi²、J. Hirase²、T. Yamada²、H. Ogawa²、Y. Mori² (1.Renesas Tech. Corp.、2.Matsushita Electric Industrial Co., Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-3] CMOSFET Featuring Atomically Flat Gate Insulator Film/Silicon Interface on (100) Orientation Surface

R. Kuroda¹、A. Teramoto¹、T. Suwa¹、Y. Nakao¹、S. Sugawa¹、T. Ohmi^1,2 (1.Tohoku Univ.、2.WPI Research Center, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-4] A Comprehensive Study of Coulomb Scattering Mobility in Short-Channel Process-Induced Strain NMOSFETs

W. P. N. Chen^1,2、P. Su²、K. Goto¹ (1.Taiwan Semiconductor Manufacturing Co., Ltd.、2.National Chiao Tung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-1] Analysis of V^th Fluctuation at High Temperature using Takeuchi Plot

T. Tsunomura¹、A. Nishida¹、K. Takeuchi¹、S. Inaba¹、A. T. Putra³、S. Kamohara¹、K. Terada²、T. Hiramoto^1,3、T. Mogami¹ (1.MIRAI-Selete、2.Hiroshima City Univ.、3.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-2] Process Architecture for Spatial and Temporal Variability Improvement of SRAM Circuits at the 45nm Node

N. Planes¹、V. Huard¹、C. Laviron²、O. Callen¹、J. Bonnouvrier¹、O. Menut¹、S. Haendler¹、M. Haond¹、F. Boeuf¹ (1.STMicroelectronics、2.CEA-LETI, France)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-3] Modeling of MOSFET Characteristics using In-line Inspection Data and Statistical Explanation of Global Variation

M. Kurihara¹、M. Izawa¹、J. Tanaka¹、K. Kawai²、R. Yoshifuku²、T. Maruyama²、T. Imbe²、Y. Koide²、N. Fujiwara² (1.Hitachi, Ltd.、2.Renesas Tech. Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード