[A-6-4] Schottky-Barrier Height Tuning of Nickel Silicide on Epitaxial Silicon-Carbon Films with High Substitutional Carbon Content

P. S. Y. Lim¹、R. T. P. Lee¹、A. E. J. Lim¹、A. T. Y. Koh¹、M. Sinha¹、D. Z. Chi²、Y. C. Yeo¹ (1.National Univ. of Singapore、2.Inst. of Materials Res. and Eng., Singapore)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-1] Pushing Bulk Transistor with Conventional SiON Gate Oxide for Low Power Applications

G. Bidal^1,3、F. Boeuf¹、F. Payet¹、S. Denorme¹、N. Loubet¹、P. Perreau²、C. Mezzomo^1,3、M. Marin¹、D. Fleury^1,3、C. Leyris¹、F. Leverd¹、P. Gouraud¹、C. Laviron²、R. Beneyton¹、A. Torres²、B. Imbert¹、D. Delille⁴、L. Clement¹、G. Ghibaudo³、T. Skotnicki¹ (1.STMicroelectronics、2.CEA-LETI、3.IMEP, France、4.FEI, Netherlands)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-2] Additive Process Induced Strain (APIS) Technology for L_g = 30nm Band-Edge High-k/Metal Gate nMOSFET

M. M. Hussain¹、K. Rader²、C. Smith³、C. Young¹、S. Suthram⁴、C. Park¹、M. Cruz¹、P. D. Kirsch¹、R. Jammy⁵ (1.SEMATECH、2.Texas State Univ.、3.Univ. of North Texas、4.Univ. of Florida、5.IBM Assignee, USA)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-3] Vertical Scaling of Metal/High-k Gate Stacked MOSFETs for Hp45 and Beyond

T. Matsuki¹、T. Watanabe¹、T. Morooka¹、M. Sato¹、M. Kadoshima¹、T. Onizawa¹、T. Eimori¹、M. Nakamura¹、Y. Nara¹、Y. Ohji¹ (1.Selete, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-4] V_fb Lowering Effect of TaC/Rare Earth Metal/TaC Laminated Gate Electrode Applicable to N-MISFET with HfSiON and its Physical Origins before and after High-Temperature Annealing

R. Ichihara¹、M. Koyama¹ (1.Toshiba Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-1] Low V_t Metal-Gate/High-k CMOS from Understanding the Mechanism to Innovative Solution (Invited)

A. Chin^1,2、C. H. Cheng²、N. C. Su³、S. J. Wang³、C. C. Liao^1,2、C. P. Chou²、H. L. Hwang^1,4 (1.Nano-Electronics Consortium of Taiwan、2.National Chiao Tung Univ.、3.National Cheng Kung Univ.、4.National Tsing Hua Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-2] Improvement of Metal/High-k Device Performance by 40-Milli-Second Flash Lamp Annealing by using Flexibly-Shaped-Pulse Technology

T. Onizawa¹、S. Kato¹、T. Aoyama¹、Y. Nara¹、Y. Ohji¹ (1.Selete, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-3] Dual Metal Gate Technology with Metal Inserted FUSI Stack (MIFS) using Single Phase FUSI for Scaled High-k CMOSFETs

M. Kadoshima¹、T. Matsuki¹、T. Aminaka¹、E. Kurosawa¹、M. Kitajima¹、T. Aoyama¹、Y. Nara¹、Y. Ohji¹ (1.Selete, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-4] Hybrid Gate Structures of NMOS : Poly-Si / PMOS : 2 Layers Ni-FUSI by using Flash Lamp Anneal (FLA) and CMP

H. Ohta¹、S. Akiyama²、H. Fukutome¹、K. Ookubo²、K. Kawamura²、N. Idani²、S. Satoh¹ (1.Fujitsu Labs. Ltd.、2.Fujitsu Microelectronics Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-9-1] Influence of the Light Irradiation on Galvanic Corrosion of Metal Gate

D. Watanabe^1,2、H. Aoki¹、J. Jong-Hyeon¹、C. Kimura¹、T. Sugino¹ (1.Osaka Univ.、2.Daikin Industries, Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード