[G-3-5] Low-Capacitance Low-Voltage Transient Voltage Suppression Circuit by Diode Activated SiGe HBT in SiGe HBT BiCMOS Process

S. H. Dai¹、J. J. Peng¹、C. C. Chen¹、C. J. Lin¹、Y. C. King¹ (1.National Tsing Hua Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-5-1] GaN HEMTs "Present Status and Future Prospect" (Invited)

T. Kikkawa^1,2、S. Nakajima³ (1.Fujitsu Ltd.、2.Fujitsu Labs. Ltd.、3.Eudyna Devices Inc., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-5-2] V_T-V_SUB Characterization of AlGaN/GaN HFET with Regrown Epi-layer on p-GaN

C. Y. Hu¹、K. Nakatani¹、D. Kikuta²、M. Sugimoto³、J. P. Ao¹、Y. Ohno¹ (1.Univ. of Tokushima、2.Toyota Central R&D Labs., Inc.、3.Toyota Motor Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-5-3] High-Temperature Performance of AlGaN/GaN HEMT-Compatible Lateral Field Effect Rectifier

K. Y. Wong¹、W. Chen¹、W. Huang¹、K. J. Chen¹ (1.Hong Kong Univ. of Sci. and Tech., China)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-5-4] GaN Schottky Diodes for Microwave Power Rectification

K. Takahashi¹、J. P. Ao¹、Y. Ikawa¹、C. Y. Hu¹、H. Kawai²、N. Shinohara³、N. Niwa⁴、Y. Ohno¹ (1.Univ. of Tokushima、2.POWDEC K.K、3.Univ. of Kyoto、4.Kajima Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-6-1] Failure Mechanisms of GaN-Based Transistors in On-and Off- State (Invited)

E. Zanoni¹、G. Meneghesso¹、C. Dua²、M. Peroni³、M. Uren⁴ (1.Univ. of Padova, Italy、2.Alcatel-Thales III-V Lab., France、3.Selex SI, Italy、4.QinetiQ Ltd., UK)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-6-2] Precise C-V Analysis of Insulated-gate/AlGaN/GaN Interfaces

M. Miczek¹、B. Adamowicz¹、C. Mizue²、T. Hashizume² (1.Silesian Univ. of Tech., Poland、2.Hokkaido Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-6-3] Near-midgap Deep Levels in MOVPE-grown AlGaN

K. Sugawara¹、J. Kotani¹、T. Hashizume¹ (1.Hokkaido Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-6-4] On the Stability of Fluorine Ions in AlGaN/GaN System: a Theoretical Study

L. Yuan¹、M. Wang¹、K. J. Chen¹ (1.Hong Kong Univ. of Sci. and Tech., China)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-7-1] 4H-SiC Trench MOSFETs with Low On Resistance

Y. Nakano¹、T. Mukai¹、R. Nakamura¹、T. Nakamura¹、A. Kamisawa¹ (1.ROHM Co., Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

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