[P-1-1] Atomic-Scale Simulation of Si Etching by Energetic Br⁺ and Br₂⁺ Ions for the Analysis of Gate- or STI- Etching Processes

T. Nagaoka¹、H. Ohta¹、K. Eriguchi¹、K. Ono¹ (1.Kyoto Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-2] Thermal Stability and Scalability of Mictamict Ti-Si-N MOS Gate Electrodes

H. Kondo¹、K. Furumai¹、M. Sakashita¹、A. Sakai²、M. Ogawa¹、S. Zaima¹ (1.Nagoya Univ.、2.Osaka Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-3] New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO₂ nMOSFET

W. C. Wu¹、T. S. Chao¹、T. H. Chiu¹、C. S. Lai²、J. C. Wang³、M. W. Ma¹、W. C. Lo¹ (1.National Chiao Tung Univ.、2.Chang Gung Univ.、3.Nanya Tech. Corp., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-4] Low Temperature, Anisotropic, Lattice-Plane-Free and Damage-free Oxidation for 3 Dimensional Structure by Oxygen Neutral Beams

M. Yonemoto¹、K. Sano¹、K. Endo²、T. Matsukawa²、M. Masahara²、S. Samukawa¹ (1.Tohoku Univ.、2.AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-5] Improving Hf-based High-k/Metal Gate n-MOSFET Performances with Gadolinium Cap Layer

C. W. Hsu¹、Y. K. Fang¹、W. K. Yeh²、J. Y. Chen²、C. T. Lin³、C. H. Hsu³、L. W. Cheng³、C. M. Lai³ (1.National Cheng Kung Univ.、2.National Univ. of Kaohsiung、3.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-6] Interfacial and Electrical Characterization of ALD HfSiON Gated MOSFETs with Different Compositions after Channel Hot-Carrier Stress

H. W. Chen¹、S. Y. Chen¹、C. C. Lu¹、C. H. Liu²、F. C. Chiu²、H. S. Huang¹、L. W. Cheng³、C. T. Lin³、G. H. Ma³、S. W. Sun³ (1.National Taipei Univ. of Tech.、2.Ming Chuan Univ.、3.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-7] Low-Temperature Polycrystalline Silicon Thin-Film-Transistor with Fluorinated High-k HfO₂ Gate Dielectrics by HF Dip and CF₄ Plasma

C. W. Chen¹、C. S. Lai¹ (1.Chang Gung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-8] Interfacial and Electrical Characterization in MOSFETs with CeO₂ Gate Dielectric

F. C. Chiu¹、H. W. Chen²、C. H. Chen³、C. H. Liu¹、S. Y. Chen²、B. S. Huang²、H. S. Huang²、H. L. Hwang³ (1.Ming Chuan Univ.、2.National Taipei Univ. of Tech.、3.National Tsing-Hua Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-9] Drain Bias Dependent Model of Si-H Bond Dissociation for NBTI Characteristics of pMOSFETs

J. Yang¹、L. Huang¹、J. Pan¹、X. Liu¹、R. Han¹、J. Kang¹、Z. H. Gan²、M. Liao²、C. C. Liao²、H. M. Wu² (1.Peking Univ.、2.Semiconductor Manufacturing International Corp., China)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-1-10] Implantation through HfO₂: Calibration of Simulation and Study on Hf Behavior during Implant

J. Bhandari^1,2、P. Rivallin¹、M. Vinet¹、T. Poiroux¹、J. P. Barnes¹、B. Previtali¹、S. Deleonibus¹、A. M. Ionescu² (1.CEA-LETI/MINATEC, France、2.Ecole Polytechnique Fédérale de Lausanne, Switzerland)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

587件中(411 - 420)

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