The Japan Society of Applied Physics

633件中(111 - 120)

[E-4-03] The Effect of Crystallinity of Channel Silicon Formed by Two Different Metal Induced Lateral Crystallization (MILC) on Cell Current Distribution in 3D Flash Memory

Haruki Matsuo1, Hiroki Yamashita1, Yusuke Shimada1, Noritaka Ishihara1, Satoshi Seto1, Sho Morita1, Masafumi Ukishima1, Kazuya Uejima1, Yusuke Arayashiki1, Suzuka Kajiwara1, Akiyuki Murayama1, Katsuya Nishiyama1, Kikuko Suhimae1, Shinji Mori1, Yuta Saito1, Takeshi Shundo1, Yurika Kanno1, Hiroyuki Kamiya2, Yasuhiro Uchiyama1, Fumiki Aisou1, Katsuyuki Sekine1, Norio Ohtani1 (1. Kioxia Corp. (Japan), 2. Western Digital Corp. (United States of America))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 11:30 〜 11:45 |PDF ダウンロード

[E-5-01 (Late News)] Electrical Characteristic Degradation of Ultra-Scaled IGZO-TFTs Induced by Bias- and Temperature-Dependent Hot Carrier Stresses

Muhammad Aslam1,2, Shu-Wei Chang3, Yao Jen Lee4, Yiming Li1,2,4,5,6,7, Wen-Hsi Lee3 (1. Parallel and Scientific Computing Laboratory, National Yang Ming Chiao Tung Univ. (Taiwan), 2. EECS International Graduate Program, National Yang Ming Chiao Tung Univ. (Taiwan), 3. Department of Electrical Engineering, National Cheng Kung Univ. (Taiwan), 4. Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung Univ. (Taiwan), 5. Institute of Communications Engineering, National Yang Ming Chiao Tung Univ. (Taiwan), 6. Institute of Communications Engineering, National Yang Ming Chiao Tung Univ. (Taiwan), 7. Department of Electronics and Electrical Engineering, National Yang Ming Chiao Tung Univ. (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 09:00 〜 09:15 |PDF ダウンロード

[E-5-02] Improved C-axis-aligned Crystalline Oxide Semiconductor FET Suitable for Scaling and Monolithic Stacking for Higher Integration of Integrated Circuit

Hiromi Sawai1, Motomu Kurata1, Tsutomu Murakawa1, Yoshinori Ando1, Takako Kikuchi1, Kunihiro Fukushima1, Ryota Eto1, Shinya Sasagawa1, Kentaro Sugaya1, Ryota Hodo1, Yuki Okamoto1, Toshiki Mizuguchi1, Hitoshi Kunitake1, Shunpei Yamazaki1 (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 09:15 〜 09:30 |PDF ダウンロード

[E-6-01] Using thin-film transistor with thick oxygen-doped SZTO channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance

Chang- Yu Liao1, Rong-Ming Ko2, Yu-Hao Chen1, Chien-Hung Wu3, Shui-Jinn Wang1,2 (1. Inst. of Microelectronics, Department of Electrical Eng., National Cheng Kung Univ., Tainan (Taiwan), 2. Academy of Innovative Semiconductor and Sustainable Manufac., National Cheng Kung Univ., Tainan (Taiwan), 3. Department of Optoelectronics and Materials Eng., Chung Hua Univ., Hsinchu (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 10:45 〜 11:00 |PDF ダウンロード

633件中(111 - 120)