[F-7-01 (Invited)] Channel and Transistor Stacking of Nanosheets

Chien-Te Tu¹, Wan-Hsuan Hsieh¹, Yi-Chun Liu¹, Yu-Rui Chen¹, Bo-Wei Huang¹, Chun-Yi Cheng¹, ^○Chee Wee Liu¹ (1. National Taiwan Univ. (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 13:30 〜 14:00 |PDF ダウンロード

[F-7-02] Epi Source/Drain Damage Mitigation with Inner Spacer and Buffer Optimization in Stacked Nanosheet Gate-All-Around Transistors

Curtis S Durfee¹, Ivo Otto², ^○Subhadeep Kal², Shanti Pancharatnam¹, Matthew Flaugh², Toshiki Kanaki², Matthew Rednor², Huimei Zhou¹, Liqiao Qin¹, Juntao Li¹, Luciana Meli¹, Nicolas Loubet¹, Peter Biolsi², Nelson Felix¹ (1. IBM (United States of America), 2. TEL (United States of America))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 14:00 〜 14:15 |PDF ダウンロード

[F-7-03] Ferroelectric Hf _0.5Zr _0.5O ₂ Omega FET and CMOS Inverter with SiGe/Si Super-Lattice channel

^○Yi- Ju Yao¹, Ting-Yu Tseng², Ching-Ru Yang², Tsai-Jung Lin¹, Heng-Jia Chang², Guang-Li Luo³, Fu-Ju Hou³, Yung-Chun Wu² (1. College of Semiconductor Research, National Tsing Hua University (Taiwan), 2. Department of Engineering and System Science, National Tsing Hua University (Taiwan), 3. Taiwan Semiconductor Research Institute (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 14:15 〜 14:30 |PDF ダウンロード

[F-7-04] Monolithic heterogeneous Integration Inverter Consisting of Si (100) PMOSFET and Normally-off Al ₂O ₃/GaN NMOSFET

^○Yutong Fan^1,2, Weihang Zhang^1,2, Xi Liu¹, Yu Wen¹, Zhihong Liu^1,2, Shenglei Zhao¹, Jincheng Zhang^1,2, Yue Hao^1,2 (1. Lab. of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Univ. of Xidian (China), 2. Guangzhou wide bandgap semiconductor innovation center, inst. of Guangzhou technology, Univ. of Xidian (China))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 14:30 〜 14:45 |PDF ダウンロード

[F-7-05 (Late News)] Device Characteristic Variability of GAA Si NS CFETs Induced by PVE and IPF

^○Sekhar Reddy Kola¹, Yiming Li¹ (1. National Yang Ming Chiao Tung University (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 14:45 〜 15:00 |PDF ダウンロード

[F-7-06 (Late News)] Channel Trimming Process to Improve Electro-thermal Characteristics for Sub-3-nm Node Nanosheet Field-Effect Transistors with Laser Spike Annealing

^○Sanguk Lee¹, Jinsu Jeong¹, Seunghwan Lee¹, Junjong Lee¹, Jaewan Lim¹, Yonghwan Ahn¹, Rockhyun Baek¹ (1. Univ. of POSTECH (Korea))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 15:00 〜 15:15 |PDF ダウンロード

[F-8-01 (Invited)] Vertical-Transport Nanosheet Technology for Scaling beyond the Lateral-Transport Devices CMOS Era

^○Hemanth Jagannathan¹ (1. IBM Research (United States of America))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 15:30 〜 16:00 |PDF ダウンロード

[F-8-02] Holistic Analysis of Asymmetry in Vertical Silicon Gate-all-around Nanosheet FETs

^○Jinsu Jeong¹, Sanguk Lee¹, Seunghwan Lee¹, Junjong Lee¹, Jaewan Lim¹, Rock-Hyun Baek¹ (1. Pohang Univ. of Sci. and Tech. (POSTECH) (Korea))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 16:00 〜 16:15 |PDF ダウンロード

[F-8-03] 3D Stack Ultra High Resistance Via Matrix by Cu BEOL Structuresin Nano-scaled CMOS Processing Node

Li-Yu Yeh¹, ^○Ya-Lin Chang¹, Yue-Der Chih², Jonathan Chang², Chrong-Jung Lin¹, Ya-Chin King¹ (1. National Tsing Hua University (Taiwan), 2. Design Technology Platform, Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 16:15 〜 16:30 |PDF ダウンロード

[G-1-01 (Invited)] Considerations for post-Cu Alternative Metal BEOL Interconnects ~ Challenges and Solutions ~

^○Koichi Motoyama¹ (1. IBM Res. (United States of America))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 14:00 〜 14:30 |PDF ダウンロード