[E-8-03 (Late News)] Infinite Growth of (001) Single Crystal Strip in Ge Film on SiO2 by Micro-Chevron Laser Scanning Method

^○Wenchang Yeh¹, Takashi Osato¹ (1. Shimane University (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 16:00 〜 16:15 |PDF ダウンロード

[F-1-01] Gate-Length Dependent Variability of nMOSFET at Cryogenic Temperatures

Toshitsugu Sakamoto¹, Makoto Miyamura¹, ^○Kazunori Funahashi¹, Munehiro Tada¹, Ken Uchida², Hiroki Ishikuro³ (1. NanoBridge Semiconductor, Inc. (Japan), 2. Univ. of Tokyo (Japan), 3. Keio Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 14:00 〜 14:15 |PDF ダウンロード

[F-1-02] Sub-20nm gate length p-FinFETs device performance improvement using TEM/EDX and NBD based TCAD calibrations.

^○Pierre EYBEN¹, Pierre De Keersgieter¹, Philippe Matagne¹, Thomas Chiarella¹, Clément Porret¹, Andriy Hikavyy¹, Yong Kong Siew¹, Ludovic Goux¹, Jérôme Mitard¹, Naoto Horiguchi¹ (1. Imec (Belgium))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 14:15 〜 14:30 |PDF ダウンロード

[F-1-03] Demonstration of Cavity Capacitor for Advanced Nanosheet Gate Stack Study

^○Camila Cavalcante¹, H. Arimura¹, Y. Oniki¹, F. Sebaai¹, E. Capogreco¹, L-A. Ragnarsson¹, B.T. Chan¹, A. Hikavyy¹, H. Mertens¹, K. Vandersmissen¹, E. Dentoni Litta¹, S. Subramanian¹, S. Biesemans¹, N. Horiguchi¹ (1. imec (Belgium))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 14:30 〜 14:45 |PDF ダウンロード

[F-1-04] The Frequency Response Properties of Interface Traps at the HfO ₂/Si Interface Using an Ultrafast DLTS Method

^○Luping Wang¹, Junkang Li¹, Rui Zhang¹ (1. Zhejiang Univ. (China))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 14:45 〜 15:00 |PDF ダウンロード

[F-1-05] The Impact of Back Bias on The Random Telegraph Noise in the Co-intregrated Strained CMOS on Ultra-Thin Body and BOX SOI Platform

^○Xinze Li¹, Sebastien Loubriat², Guillaume Besnard³, Christophe Maleville³, Olivier Weber⁴, Ran Cheng¹ (1. Zhejiang Univ. (China), 2. CEA-LETI Corp. (France), 3. SOITEC Corp. (France), 4. STMicroelectronics Corp. (France))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 15:00 〜 15:15 |PDF ダウンロード

[F-1-06] Assessment of Traps-induced Noise in FDSOI MOSFETs

^○Jinghan Xu¹, Mengqi Fan¹, Zixuan Sun¹, Fei Liu¹, Xiaoyan Liu¹ (1. Peking University (China))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 15:15 〜 15:30 |PDF ダウンロード

[F-1-07 (Late News)] Relationship between Electron Velocity Overshoot and Quantum Confinement in Si Nanosheet Gate-All-Around Field-Effect Transistors

^○Junichi Hattori¹, Koichi Fukuda¹, Tsutomu Ikegami¹, Yoshihiro Hayashi¹ (1. AIST (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 15:30 〜 15:45 |PDF ダウンロード

[F-3-01] First Demonstration of SiGe/Si Super-Lattice Ferroelectric HfZrO ₂ Multibit FinFET for Nonvolatile Memory

^○Tsai- Jung Lin¹, Yi-Ju Yao¹, Ting-Yu Tseng², Ching-Ru Yang², Heng-Jia Chang², Guang-Li Luo³, Fu-Ju Hou³, Yung-Chun Wu² (1. College of Semiconductor Research, National Tsing Hua University (Taiwan), 2. Department of Engineering and System Science, National Tsing Hua University (Taiwan), 3. Taiwan Semiconductor Research Institute (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 09:00 〜 09:15 |PDF ダウンロード

[F-3-02] Reliability Improvement of MFM Capacitors by Ozone Treatment on Bottom TiN Electrode

^○Haoji Qian¹, Rongzong Shen¹, Jiajia Chen¹, Gaobo Lin¹, Minglei Ma², Jiacheng Xu¹, Chengji Jin¹, Yan Liu², Xiao Yu¹, Genquan Han² (1. Zhejiang Lab. (China), 2. Xidian University (China))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 09:15 〜 09:30 |PDF ダウンロード