[PS-9-09] A Probabilistic-Bits Design based on Stochastic Ferroelectric Field-Effect Transistors

^○Sheng Luo¹, Yihan He¹, Baofang Cai¹, Xiao Gong¹, Gengchiau Liang¹ (1. National Univ. of Singapore (Singapore))

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[PS-10-01] Withdrawn

2023 International Conference on Solid State Devices and Materials

[PS-10-02] Ferroelectric properties of 50 nm size BaTiO₃ /polysiloxane nanocomposites processed by low temperature solution method

^○ChuanJun Wu¹, Juan Paolo Bermundo¹, Aimi Syairah Safaruddin¹, Atsuko Yamamoto², Yukiharu Uraoka¹ (1.NARA Inst. of Sci. and Tech. (Japan), 2. Merck Electronics Ltd. (Japan))

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[PS-10-03] Fabrication of HfO₂ dielectric with κ-value exceeding 30 at room temperature

Mochamad Januar¹, Chun-Yen Li¹, ^○Kou-Chen Liu^1,2,3 (1. Chang Gung University (Taiwan), 2. Chang Gung Memorial Hospital (Taiwan), 3. Ming Chi University of Technology (Taiwan))

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[PS-10-04] Effect of Bilayer High-kAl₂O₃ and HfO₂ Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

^○Dian Budiarti Kastian¹, Juan Paolo Bermundo¹, Yukiharu Uraoka¹ (1. Nara Inst. of Sci. and Tech. (Japan))

2023 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-10-05] Characterization of Metal/IGZO Contact with Back-to-Back Schottky Diode

^○Shujuan Mao¹, Jianfeng Gao², Weibing Liu², Yanping He², Xu Chen², Gaobo Xu², Jinbiao Liu², Junfeng Li², Jun Luo², Jing Zhang¹, Yuke Li¹, Xiangsheng Wang¹, Wei Yu¹, Chao Tian¹, Hongbo Sun¹, Jinjuan Xiang¹, Guilei Wang¹, Chao Zhao¹ (1. Beijing Superstring Academy of Memory Technology (China), 2. Institute of Microelectronics, Chinese Academy of Sciences (China))

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[PS-10-06] Developing Fully Room-Temperature-Fabricated SnO_x-Based p-n Diodes via Ion-Beam-Assisted Deposition & Numerical Analysis

^○Mochamad Januar¹, Suhendro Purbo Prakoso², Jang-Hsing Hsieh^3,4, Kou-Chen Liu^1,5,4 (1. Chang Gung University (Taiwan), 2. National Taiwan University of Science & Technology (Taiwan), 3. National Yang Ming Chiao Tung University (Taiwan), 4. Ming Chi University of Technology (Taiwan), 5. Chang Gung Memorial Hospital (Taiwan))

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[PS-10-07] Nano-Scale InSnO Transistors with an On-State Current of 325 μA/μm at V_D = 2 V

^○dengqin xu¹ (1. peking Univ (China))

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[PS-10-08] High Electrical Performance with Superior Bias Stabilities for an Oxide Thin-Film Transistor with Solution-Processed Ultra-Thin Semiconductor

^○Jun-Hyeong Park¹, Do-Kyung Kim¹, Jin-Hyuk Bae^1,2 (1. School of Electronic and Electrical Engineering, Kyungpook National Univ. (Korea), 2. School of Electronics Engineering, Kyungpook National Univ. (Korea))

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[PS-10-09] Temperature Dependence of GeS Crystallization by Using a Vapor Transport Method

^○Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata^1,2 (1. NIMS (Japan), 2. Univ. of Tsukuba (Japan))

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