[E-6-02] Development of a Low-Powered, Ultra-Sensitive, Room-Temperature-Operated SnO ₂-Based NOx Gas Sensor Using Sol-Gel Technique

^○Moumita Deb¹, Ngoc Khanh Tran Ho², Hsin Fei Meng², Olivier Soppera³, Hsiao Wen Zan¹ (1. Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung Univ. (Taiwan), 2. Institute of Physics, National Yang Ming Chiao Tung Univ. (Taiwan), 3. Université de Haute-Alsace, CNRS, IS2M (France))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 11:00 〜 11:15 |PDF ダウンロード

[E-6-03] Selenized 2D Film Based Gas Sensor with Self-Convergent Calibration

Che-Chuan Liu¹, ^○Hsin-Yi Shen¹, Kuangye Wang², Yu-Lun Chueh², Yue-Der Chih³, Jonathen Chang³, Jiaw-Ren Shih¹, Chrong-Jung Lin¹, Ya-Chin King¹ (1. Microelectronics Laboratory, Institute of Electronics Engineering, National Tsing Hua Univ. (Taiwan), 2. Department of Materials Science and Engineering, National Tsing Hua Univ. (Taiwan), 3. Design and Technology Platform, Taiwan Semiconductor Manufacturing Company (tsmc) (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 11:15 〜 11:30 |PDF ダウンロード

[E-6-04] Reducing Leakage Current with Wider-Bandgap Alumina Films Formed by Ultrathin-AlN Oxidation

^○Yusuke Nakajima¹, Akira Takashima¹, Masaki Noguchi¹, Tatsunori Isogai¹ (1. KIOXIA Corp. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 11:30 〜 11:45 |PDF ダウンロード

[E-6-05] Controlling SiO ₂ Thin Film Charge and Interface Defect Density on Germanium

^○Hanchen Liu¹, Toni P Pasanen¹, Oskari Leiviskä¹, Joonas Isometsä¹, Tsun Hang Fung¹, Marko Yli-Koski¹, Mikko Miettinen², Pekka Laukkanen², Ville Vähänissi¹, Hele Savin¹ (1. Aalto Univ. (Finland), 2. Univ. of Turku (Finland))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 11:45 〜 12:00 |PDF ダウンロード

[E-7-01 (Invited)] System-on-Glass Technology with LTPS TFTs

^○Yoshiharu Nakajima¹ (1. Japan Display Inc. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 13:45 〜 14:15 |PDF ダウンロード

[E-7-02] Threshold Voltage Control of LTPS TFTs with MONOS Structure

^○TETSUYA GOTO^1,2, TOMOYUKI SUWA^1,2, KEITA KATAYAMA³, SHU NISHIDA³, HIROSHI IKENOUE⁴, SHIGETOSHI SUGAWA¹ (1. Tohoku Univ. (Japan), 2. FAIS (Japan), 3. Kyushu Univ. (Japan), 4. Kochi Tech (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 14:15 〜 14:30 |PDF ダウンロード

[E-7-03] Low Ni Accumulation Symmetric S/D Vertical n-Channel Poly-Si Thin-Film Transistors Fabricated Using Dual Offset Ni Seeding Windows and Discrete Ni Formation Technology

^○Po-Yi Kuo¹, Ching-Long Huang², Guan-Lin Guo², Hao-Yu Wang², Yu-Cheng Chou², Yu-Ming Chiu², Zhen-Jie Hong² (1. National Chin Yi Univ. of Tech. (Taiwan), 2. Feng Chia Univ. (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 14:30 〜 14:45 |PDF ダウンロード

[E-7-04] Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization

^○Linyu Huang¹, Kenta Moto¹, Takamitsu Ishiyama², Kaoru Toko², Dong Wang¹, Keisuke Yamamoto¹ (1. Kyushu Univ. (Japan), 2. Univ. of Tsukuba (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 14:45 〜 15:00 |PDF ダウンロード

[E-8-01] Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge _1-xSn _x Grown on Ge(100)

^○Rahmat Hadi SAPUTRO^1,2, Tatsuro Maeda³, Ryo Matsumura¹, Naoki Fukata^1,2 (1. NIMS (Japan), 2. Univ. of Tsukuba (Japan), 3. AIST (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 15:30 〜 15:45 |PDF ダウンロード

[E-8-02] Exploration of Underlayers for Improving Crystal and Electrical Properties of Polycrystalline Ge Thin Films

^○Kota Igura¹, Shintaro Maeda¹, Takamitsu Ishiyama¹, Takashi Suemasu¹, Kaoru Toko¹ (1. Univ. of Tsukuba (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 15:45 〜 16:00 |PDF ダウンロード