[PS-1-04] Generative Adversarial Network Applied to Neuroevolution-based Compact Device models

^○Bing- Ru Jiang¹, Han-Chun Tung¹, Ting Tsai¹, Ming-Hsien Hsu¹, Albert Lin¹, Pei-Wen Li¹ (1. Natioanl Yang Ming Chiao Tung University (Taiwan))

2023 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-05] Effective Detection of Micro-Potential Analytes with Self-Sensitivity Programmable pH Sensor Platform Based on a Multi-Functional Charge-Trap-Flash-Type Ion-Sensitive-Field-Effect-Transistor

^○Yeong-Ung Kim¹, Won-Ju Cho¹ (1. Kwangwoon Univ. (Korea))

2023 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-06] Investigation of SiGe/Si Super Lattice GAAFET and CMOS Inverter

^○Heng- Jia Chang¹, Yi-Ju Yao², Ching-Ru Yang¹, Ting-Yu Tseng¹, Tsai-Jung Lin², Guang-Li Luo³, Fu-Ju Hou³, Yung-Chun Wu¹ (1. Department of Engineering and System Science, National Tsing Hua University (Taiwan), 2. College of Semiconductor Research, National Tsing Hua University (Taiwan), 3. Taiwan Semiconductor Research Institute (Taiwan))

2023 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-07] Robustness of ferroelectric domain walls in Hf_0.5Zr_0.5O₂ thin films investigated by ac-signal response of dielectric properties

^○Shinji Migita¹, Shutaro Asanuma¹, Yukinori Morita¹, Hiroyuki Ota¹ (1. AIST (Japan))

2023 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-08] Double-Gated Ferroelectric-Gate Field-Effect-Transistor for Multi-Bit Content-Addressable Memories

^○Hongrui Zhang¹, Jiajia Chen¹, Chengji Jin¹, Gaobo Lin¹, Yan Liu², Xiao Yu¹, Genquan Han² (1. Zhejiang Lab, Hangzhou 311121 (China), 2. Xidian University, Xi’an 710071 (China))

2023 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-09] Mobility Modeling of Nanosheet FET’s using Poisson-Schroedinger, Cellular Automaton Coupled Approach

^○Koichi Fukuda¹ (1. AIST (Japan))

2023 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-10] Comparative Study of Radiation Damage Effects on FinFET and GAAFET

^○Ching-Hung Chang¹, Kuei-Shu Chang-Liao¹, Dun-Bao Ruan² (1. National Tsing Hua University (Taiwan), 2. Fuzhou University (China))

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[PS-1-11] A DNN-Based Compact Modeling Technique for GAA Si NS FETs and Its Application in CMOS Circuit Simulation

Rajat - Butola¹, ^○Sekhar Reddy Kola¹, Yiming Li¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan))

2023 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-12] Engineering Oxidation State in Interfacial Layer of Ge nMOSFET with Ozone and Hydrogen Plasma Treatments on Ge

^○Cheng-Hsueh Wu¹, Kuei-Shu Chang-Liao¹, Dun-Bao Ruan² (1. National Tsing Hua University (Taiwan), 2. Fuzhou University (China))

2023 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-13] Vertical Gate-All-Around SiGeSn/GeSn/SiGeSn Nanowire nFETs

Yannik Junk¹, Omar Concepción Diaz¹, Marvin Frauenrath^2,3, Florian Bärwolf⁴, Andreas Mai⁴, Jean-Michel Hartmann^2,3, Detlev Grützmacher¹, Dan Buca¹, ^○Qing-Tai Zhao¹ (1. Peter-Grünberg-Institut (PGI-9) and JARA-FIT, Forschungszentrum Jülich (Germany), 2. CEA-LETI, MINATEC Campus, F-38054 Grenoble (France), 3. Univ. of Grenoble Alps (France), 4. IHP-Leibniz-Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder) (Germany))

2023 International Conference on Solid State Devices and Materials |PDF ダウンロード