[N-2-01 (Invited)] Proton implantation: the last resort to solve bipolar degradation of SiC power devices?

^○Masashi Kato¹, Shunta Harada², Hitoshi Sakane³ (1. Nagoya Inst. of Tech. (Japan), 2. Nagoya Univ. (Japan), 3. SHI-ATEX Co. Ltd. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 16:00 〜 16:30 |PDF ダウンロード

[N-2-02] Intrinsic carrier density in 4H-SiC obtained from diffusion current in bipolar junction transistor

Satoshi Asada¹, ^○Koichi Murata¹, Hajime Tanaka², Hidekazu Tsuchida¹ (1. CRIEPI (Japan), 2. Osaka Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 16:30 〜 16:45 |PDF ダウンロード

[N-2-03] Measurement of Heat Dissipation between SiC and Thermal Interface Material in Power Device Packaging Based on Optical-Interference Contactless Thermometry

^○Jiawen Yu¹, Ryunosuke Goto¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1. Hiroshima Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 16:45 〜 17:00 |PDF ダウンロード

[N-2-04] Analysis of Tunneling Effects in 4H-SiC Schottky Barrier Diodes Based on Complex Band Structure Considering Barrier Potential

^○Yutoku Murakami¹, Sachika Nagamizo¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 17:00 〜 17:15 |PDF ダウンロード

[N-2-05 (Late News)] Atomic and Electronic Structures of Basal Plane Dislocations (BPDs) in 4H-SiC -Atomistic Origin of Bipolar Degradation of SiC Devices-

^○Masaki Sano¹, Jun Kojima², Shoichi Onda², Takashi Yoda³, Takayuki Ohba³, Kenji Shiraishi^1,2 (1. Graduate School of Engineering, Nagoya University (Japan), 2. Institute of Materials and Systems for Sustainability (Japan), 3. WOW Alliance, Tokyo Institute of Technology (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 17:15 〜 17:30 |PDF ダウンロード

[N-3-01 (Invited)] Feasibility Study of InP-based Tera-Hertz-ICs Fabrication Process for Beyond 5G / 6G Wireless Network Systems

^○Takuya Tsutsumi¹, Hiroki Sugiyama, Hiroshi Hamada, Teruo Jyo, Yuta Shiratori, Takuya Hoshi, HIroyuki Takahashi, Fumito Nakajima, (1. NTT Device Tech. Lab. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 09:00 〜 09:30 |PDF ダウンロード

[N-3-02] Calculation of pnp GaInSb pnp lateral HBT for Complementary Bipolar Logic Technology

^○Yasuyuki Miyamoto¹, Makoto Honjyo¹, Koichi Fukuda² (1. Tokyo Tech (Japan), 2. AIST (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 09:30 〜 09:45 |PDF ダウンロード

[N-3-03] Monolithic Fully-Controlled HEMT Bidirectional Power Switch for Compact and Efficient Power Electronics Systems

^○Guoliang - Peng¹, Wei - Mao¹, Cui - Yang¹, Longyang - Yu¹, Yachao - Zhang¹, Chunfu - Zhang¹, Tao - Zhang¹, Jincheng - Zhang¹, Yue - Hao¹ (1. xidian university (China))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 09:45 〜 10:00 |PDF ダウンロード

[N-3-04] Recess Ohmic contact to AlGaN/GaN heterostructure using single or hybrid electrode structures

^○Kazuya Uryu^1,2, Yuchen Deng¹, Toshi-kazu Suzuki¹ (1. Japan Advanced Inst. of Sci. and Tech. (Japan), 2. Advantest Lab. Ltd. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 10:00 〜 10:15 |PDF ダウンロード

[N-4-01] Grid-Patterned Trench IGBT for 1.2kV HEV/PHEV Silicon Power Devices

^○Satoru Machida¹, Yusuke Yamashita¹, Jun Saito², Masaru Senoo³ (1. Toyota Central R&D Labs. Inc. (Japan), 2. MIRISE Tech. Corp. (Japan), 3. DENSO Corp. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 10:45 〜 11:00 |PDF ダウンロード