[K-1-02] Understanding Memory Window of FeFETs under Coexistence of Charge Trapping and Ferroelectric Polarization: Violation of Linear Superposition

^○Kasidit Toprasertpong^1,2, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo (Japan), 2. Stanford U. (United States of America))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 14:30 〜 14:45 |PDF ダウンロード

[K-1-03] Recovery of Cycling-Induced Degradation of Interfacial SiO ₂ in HfO ₂-FeFET and its Impact on Retention Characteristics

^○Viktoria Schlykow¹, Kunifumi Suzuki¹, Yoko Yoshimura¹, Takamasa Hamai¹, Kiwamu Sakuma¹, Kazuhiro Matsuo¹, Kota Takahashi¹, Masamichi Suzuki¹, Masumi Saitoh¹, Reika Ichihara¹ (1. KIOXIA Corporation (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 14:45 〜 15:00 |PDF ダウンロード

[K-1-04] 3D Vertical Poly-Si FeFETs Toward Stackable High-Density Non-volatile Memory Applications

^○Zhao- Feng Lou¹, Zhi-Xian Li², Fu-Sheng Chang³, Chen-Ying Lin², Jia-Hong Chen², Zong-Han Li², Cheng-Hong Liu¹, Tim Chen⁴, Min-Hung Lee¹ (1. Graduate School of Advance Tech., National Taiwan Univ. (Taiwan), 2. Inst. and Undergraduate Program of Electro-Optical Eng., National Taiwan Normal Univ. (Taiwan), 3. Graduate Inst. of Electronics Eng., National Taiwan Univ. (Taiwan), 4. AUCMOS Tech. (United States of America))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 15:00 〜 15:15 |PDF ダウンロード

[K-1-05] Withdrawn

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 15:15 〜 15:30

[K-2-01] A 0.11pJ/bit Read Energy Embedded NanoBridge NVM and its Integration in a 28nm 32-bit RISC-V MCU

^○Xu Bai¹, Ryusuke Nebashi¹, Makoto Miyamura¹, Kazunori Funahashi¹, Koichiro Okamoto¹, Hideaki Numata¹, Noriyuki Iguchi¹, Toshitsugu Sakamoto¹, Munehiro Tada¹ (1. NanoBridge Semiconductor, Inc. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 16:00 〜 16:15 |PDF ダウンロード

[K-2-02] Controllable Temporal Dynamics of Titanium Oxide Memristor for Analog Time-Based Reservoir Computing

^○Alexander- Hanyu Wang¹, Firman Simanjuntak¹, Ruomeng Huang¹, Harold Chong¹, David Thomas¹ (1. Univ. of Southampton (UK))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 16:15 〜 16:30 |PDF ダウンロード

[K-2-03] 2-kbits 40-nm Hybrid Anti-fuse and D-fuse OTP-PUF MACRO by Enhancedsecurity-processed scheme with 100-ns of Program-time & Robust-retention in 200°C

^○Po Hsiung Huang¹, Y.H. Lin¹, K.H. Chang¹, T.H. Shen¹, R.Y. Lyu¹, K.Y. Lee¹, M.L. Miu¹, E Ray Hsieh¹ (1. National Central University (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 16:30 〜 16:45 |PDF ダウンロード

[K-2-04] Investigation of Spin-on Films as Mold Stack and Controlling Wafer Warpage for 3D Memory Integration

^○Soodoo Chae¹, Hojin Kim¹, Nayoung Bae¹, Stephen Mancini², Lior Huli¹, Steven Gueci¹, Dave Hetzer¹, Sitaram Arkalgud¹ (1. TEL Technology Center, America, LLC (United States of America), 2. College of Nanoscale Science and Engineering (United States of America))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 16:45 〜 17:00 |PDF ダウンロード

[K-2-05] Performance comparison of planar and cylindrical ferroelectric tunnel junctions

^○Yirong Guo¹, Jie Li¹, Pengying Chang¹ (1. Beijing University of Technology (China))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 17:00 〜 17:15 |PDF ダウンロード

[K-2-06 (Late News)] First Demonstration of Novel Channel-less CuO _x/HfO _x Synaptic Transistor for Neuromorphic Computing Systems

^○Seonuk Jeon¹, Nayeon Kim¹, Eunryeong Hong¹, Hyun Wook Kim¹, Jiyong Woo¹ (1. Kyungpook National Univ. (Korea))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 17:15 〜 17:30 |PDF ダウンロード