The Japan Society of Applied Physics

[A-2-04] High-Frequency Semiconductor-Graphene-Semiconductor Transistors Using Epitaxial Graphene

Chi Liu1,2, Xiaoyue Wang1,2, Haiyan Jiang1,2, Xuqi Yang1,2, Zhongying Xue3, Zengfeng Di3, Dongming Sun1,2 (1. Inst. of Metal Res., Chinese Academy of Sci. (China), 2. Univ. of Sci. and Tech. of China (China), 3. Shanghai Inst. of Microsystem and Info. Tech., Chinese Academy of Sci. (China))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 16:45 〜 17:00 |PDF ダウンロード

[A-2-06 (Late News)] Multilevel Storage Enabled by Light Erasable GNDs Floating Gate Transistor with MoS 2 Channel

Han Hsiang Tai1, Yu Yuan Su1, Jer Chyi Wang1,2,3, Wen Hao Chang4,5, Chao Sung Lai1,6,7 (1. Department of Electronic Engineering, Chang Gung Univ. (Taiwan), 2. Department of Neurosurgery, Chang Gung Memorial Hospital (Taiwan), 3. Department of Electronic Engineering, Ming Chi Univ. of Tech. (Taiwan), 4. Research Center for Applied Sciences, Academia Sinica (Taiwan), 5. Department of Electrophysics, National Yang Ming Chiao Tung Univ. (Taiwan), 6.Department of Nephrology, Chang Gung Memorial Hospital (Taiwan), 7.Department of Materials Engineering, Ming Chi Univ. of Tech. (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 17:15 〜 17:30 |PDF ダウンロード

[A-3-02] Ultra-High Packing Density Vertical GaN Nanocolumn SBDs using Bottom-Up Growth Approach

Hiroyuki Shimada1, Hironobu Kariyazono1, Yohei Nakagawa1, Shinji Terao1, Kentaro Takayanagi1, Koichiro Akasaka1, Shunsuke Ishizawa1, Koichi Morozumi2, Rie Togashi3, Katsumi Kishino3 (1. Core Tech. Development Dept., Seiko Epson Corp. (Japan), 2. Material Analysis & CAE Center, Seiko Epson Corp. (Japan), 3. Sophia Nanotech. Res. Center, Sophia Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 09:30 〜 09:45 |PDF ダウンロード