The Japan Society of Applied Physics

[B-2-01 (Invited)] Cryogenic InGaAs HEMTs for LNA and routing circuits in Quantum Computing

Sanghyeon Kim1, Jaeyong Jeong1, Seong Kwang Kim1, Yoon-Je Suh1, Jisung Lee2, Joonyoung Choi3, Juhyuk Park1, Joon Pyo Kim1, Bong Ho Kim1, Younjung Jo3, Dae-myeong Geum4, Seung-Young Park2, Jongmin Park5 (1. KAIST (Korea), 2. KBSI (Korea), 3. KNU (Korea), 4. CBNU (Korea), 5. KANC (Korea))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 16:00 〜 16:30 |PDF ダウンロード

[B-2-03] Aharonov-Bohm-type oscillations in selectively-grown polymorphic core/shell GaAs/InAs nanowires

Farah Basaric1,4, Anton Faustmann1,4, Alexander Pawlis2,4, Patrick Zellekens3,5,6, Russel Deacon3,5, Benjamin Bennemann2,4, Detlev Grützmacher2,1,4, Koji Ishibashi3,5, Thomas Schäpers1,4 (1. Peter Grünberg Inst. 9, Res. center Jülich (Germany), 2. Peter Grünberg Inst. 10, Res. center Jülich (Germany), 3. RIKEN Center for Emergent Matter Sci. (Japan), 4. JARA-Fundamentals of Future Info. Tech., Jülich-Aachen Res. Alliance, Research center Jülich and RWTH Aachen Univ. (Germany), 5. RIKEN Advanced Device Lab. (Japan), 6.Special Postdoctoral Res. Program (SPDR), RIKEN (Germany))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 16:45 〜 17:00 |PDF ダウンロード

[B-2-04] Crosstalk Effect for Acousto-Electric Quantized Current

Shunsuke Ota1,2, Junliang Wang3, Hermann Edlbauer3, Yuma Okazaki2, Shuji Nakamura2, Takehiko Oe2, Arne Ludwig4, Andreas D Wieck4, Tetsuo Kodera1, Christopher Bauerle3, Shintaro Takada2, Nobu-Hisa Kaneko2 (1. Tokyo Tech (Japan), 2. AIST (Japan), 3. Inst. Neel (France), 4. Ruhr-Univ. Bochum (Germany))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 17:00 〜 17:15 |PDF ダウンロード

[B-2-05] The high concentration NV ensembles formed from heavily nitrogen-doped CVD diamond with high quality

Yudai Asano1, Kyosuke Hayasaka1, Mayu Ueda1, Kosuke Kimura2,3, Takashi Tanii1, Shinobu Onoda2, Shinpei Enomoto4, Hiroshi Kawarada1,4 (1. Waseda Univ. (Japan), 2. National Inst. of Quantum and Radiological Sci. and Tech. (Japan), 3. Gunma Univ. (Japan), 4. Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月6日(水) 17:15 〜 17:30 |PDF ダウンロード

[B-3-04 (Late News)] Ferromagnetic Semiconductor (Ga,Fe)Sb with Very High Curie Temperature (530 K) Grown on Vicinal GaAs(001) Substrates

Kenta Takabayashi1, Masaaki Tanaka2,3, Pham Nam Hai1,3 (1. Department of Electrical and Electronic Eng., Tokyo Inst. of Tech. (Japan), 2. Department of Electrical Engineering and Info. System, The Univ. of Tokyo, Tokyo 113-8656 (Japan), 3. Center for Spintronics Res. Network (CSRN), The Univ. of Tokyo, Tokyo 113-8656 (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 09:45 〜 10:00 |PDF ダウンロード