[H-3-04] Rate Equation Analysis for Deterministic and Unidirectional Lasing in Ring Resonators with an S-shaped Coupler

^○Zhiwei Dai¹, Wenbo Lin², Satoshi Iwamoto^1,3 (1. RCAST, Univ. of Tokyo (Japan), 2. KIS, Univ. of Tokyo (Japan), 3. IIS, Univ. of Tokyo (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月7日(木) 10:00 〜 10:15 |PDF ダウンロード

[H-5-01] Understanding of Polarization Reversal and Charge Trapping under Imprint in HfO ₂-FeFET by Charge Component Analysis

^○Yoko Yoshimura¹, Kunifumi Suzuki¹, Reika Ichihara¹, Kiwamu Sakuma¹, Kota Takahashi¹, Kazuhiro Matsuo¹, Makoto Fujiwara¹, Masumi Saitoh¹ (1. Kioxia Corp. (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 09:00 〜 09:15 |PDF ダウンロード

[H-5-02] Ferroelectric Properties Tuning in Hf _0.5Zr _0.5O ₂ Thin Films via Controlling the Crystal Orientations of Single-crystalline TiN Substrates

^○Yuyan Fan^1,2, Shunda Zhang³, Yulong Dong^1,2, Danyang Chen^1,2, Jiahui Zhang^3,4, Jingquan Liu¹, Mengwei Si¹, Yanwei Cao³, Xiuyan Li¹ (1. National Key Lab. of Sci. and Tech. on Micro/Nano Fabrication (China), 2. Department of Micro/Nano Electronics, Shanghai Jiao Tong Univ. (China), 3. Ningbo Inst. of Materials Tech. and Eng., Chinese Academy of Sci. (China), 4. Faculty of Electrical Eng. and Computer Sci., Ningbo Univ. (China))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 09:15 〜 09:30 |PDF ダウンロード

[H-5-03] Switching Characteristics and Endurance Analysis of Nanolaminated Ferroelectric HZO Gate Stack with Al ₂O ₃ for Back-End-of-Line Applications

^○Cheng-Hung Wu¹, Chun-Jung Su², Vita Pi-Ho Hu¹ (1. National Taiwan Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 09:30 〜 09:45 |PDF ダウンロード

[H-5-04] Laminate-Thickness-Dependent Switching Dynamics of HfO ₂-ZrO ₂ Ferroelectric Nanolaminate Capacitors

^○Xiaoyu Ke^1,2, Junshuai Chai^1,2, Hao Xu^1,2, Xiaolei Wang^1,2, Wenwu Wang^1,2 (1. Key Lab. of Microelectronics Devices and Integrated Tech., Inst. of Microelectronics, Chinese Academy of Sci. (China), 2. College of Integrated Circuits, Univ. of Chinese Academy of Sci. (China))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 09:45 〜 10:00 |PDF ダウンロード

[H-5-05] Performance Improvement of HfZrO _x Ferroelectric Tunnel Junction with Amorphous Al ₂O ₃ Passivation Layer

^○Yueyuan - Zhang¹, Yue - Peng¹, Fenning - Liu¹, Yan - Liu¹, Yue - Hao¹, Genquan - Han¹ (1. Xidian Univ. (China))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 10:00 〜 10:15 |PDF ダウンロード

[H-6-01] High Brightness Addressable VCSEL Array with Zn-Diffusion Apertures at 940 nm Wavelength

^○Min-Long Wu¹, Zuhaib Khan¹, Cheng-Wei Lin¹, Jin-Wei shi Shi¹ (1. National Central University (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 10:45 〜 11:00 |PDF ダウンロード

[H-6-02] Fabrication and optical characterization of a GaN-based micro-disk laser undercut by laser-assisted photo-electrochemical etching

^○Takeyoshi Tajiri¹, Sho Sosumi¹, Kazuo Uchida¹ (1. The University of Electro-Communications (Japan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 11:00 〜 11:15 |PDF ダウンロード

[H-6-03] Enhanced Carrier Collection Efficiency in GeSn Waveguide Light-Emitting Diodes via Strain Engineering

^○Cheng-Ting Kuo¹, Yi-Wei Peng¹, Yue-Tong Jheng¹, Guo-En Chang¹ (1. National Chung Cheng Univ. (Taiwan))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 11:15 〜 11:30 |PDF ダウンロード

[H-6-04] A Novel Tensile Strained Ge/InGaAs Quantum Well Laser for MIR Applications

^○Rutwik Joshi¹, Steven Johnston², Sengunthar Karthikeyan¹, Mantu Hudait¹ (1. Virginia Tech, (United States of America), 2. National Renewable Energy Lab. (United States of America))

2023 International Conference on Solid State Devices and Materials |2023年9月8日(金) 11:30 〜 11:45 |PDF ダウンロード