Oral presentation

[11a-S422-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Mon. Mar 11, 2019 9:30 AM - 12:15 PM S422 (S422)

Kwoen Jinkwan(The Univ. of Tokyo), Keisuke YAMANE(Toyohashi Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[11a-S422-1] XRD measurements of GaAs nanowires with N and Bi

〇Takaya Mita¹, Ryo Fujiwara¹, Mitsuki Yukimune¹, Fumitaro Isikawa¹ (1.Ehime Univ)

9:45 AM - 10:00 AM

[11a-S422-2] Growth of GaAs/GaNAs Core-Multishell Nanowires on Silicon and SOI

〇Ryo Fujiwara¹, Mitsuki Yukimune¹, Fumitaro Ishikawa¹ (1.Ehime Univ.)

10:00 AM - 10:15 AM

[11a-S422-3] Electron activation energy in Si doped GaAsN as a function of Si impurity concentration

〇Takashi Tsukasaki¹, Ren Hiyoshi¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)

10:15 AM - 10:30 AM

△ [11a-S422-4] Investigation on Annhilation of Point Defects in III-V-N Alloys by Proton Irradiation

〇Shigeto Genjo¹, Keisuke Yamane¹, Ryo Futamura¹, Mitsuru Imaizumi², Akihiro Wakahara¹ (1.Toyohashi Univ. Tech., 2.JAXA)

10:30 AM - 10:45 AM

[11a-S422-5] Fabrication of GaAsPN subcell toward monolithic III-V/Si multijunction solar cells

〇(M1C)Toshiki Takachi¹, Keisuke Yamane¹, So Hikosaka¹, Junya Fujimoto¹, Hiroto Sekiguchi¹, Hiroshi Okada¹, Akihiro Wakahara¹ (1.Toyohashi Tech)

11:00 AM - 11:15 AM

[11a-S422-6] Evaluation of Electrical Characteristics of GaAsN Films with Intentional Change of N Distribution

〇(D)Masahiro Kawano¹, Daiki Ueda¹, Ryo Minematsu¹, Tomohiro Haraguchi¹, Hidetoshi Suzuki¹ (1.Miyazaki Univ.)

11:15 AM - 11:30 AM

[11a-S422-7] PL polarization degree of GaAs Bi / GaAs multiple quantum well by Bi-irradiation alone

〇Takumi Yamamoto¹, Toui Higuti¹, Homare Kanbara¹, Satoshi Shimomura¹ (1.Ehime Univrsity)

11:30 AM - 11:45 AM

[11a-S422-8] Substrate surface index dependence of polarized PL spectrum of GaAs Bi / GaAs multiple quantum well

〇Homare Kambara¹, Toui Higuchi¹, Akira Tsukamoto¹, Takumi Yamamoto¹, Pallavi Patil¹, Satoshi Shimomura¹ (1.Ehime Univ)

11:45 AM - 12:00 PM

[11a-S422-9] Estimation of As and Sb incorporation into InAs/GaSb superlattice grown by MOVPE

〇Yuki Imamura¹, Yuya Yamagata¹, Yuki Nakayama¹, Ryosuke Wakaki¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

12:00 PM - 12:15 PM

[11a-S422-10] Comparison of thickness-dependence of structural degradation in tensile-strained GaAsSb and InGaAs layers grown on InP substrates

〇Manabu Mitsuhara¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Takahiro Gotow², Mitsuru Takenaka², Shinichi Takagi² (1.NTT Device Technology Labs, 2.The Univ. of Tokyo)

Poster presentation

[11p-PA4-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PA4 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[11p-PA4-1] First-Pinciples Calculation of Annihilation Process of Nitorogen-Related Point Defects in GaPN

〇Yuito Maki¹, Keisuke Yamane¹, Hiroto Sekiguchi¹, Hiroshi Okada¹, Akihiro Wakahara¹ (1.Toyohashi Tech.)

1:30 PM - 3:30 PM

[11p-PA4-2] Effect of Gate-Channel Distance Parameters on Electrical Properties of GaInSb Channel HEMT Structure

〇Naoyuki Kishimoto¹, Yuki Endoh¹, Takuya Hayashi¹, Mizuho Hiraoka¹, Ryuto Machida¹, Akira Endoh¹, Hiroki I. Fujishiro¹ (1.TUS)

1:30 PM - 3:30 PM

[11p-PA4-3] Fabrication of QD lasers including in-plane ultrahigh-density InAs QD layers

〇(M1)Motoyuki Tanaka¹, Keichiro Bamba¹, Koichi Yamaguchi¹ (1.UEC)

1:30 PM - 3:30 PM

[11p-PA4-4] Three-pulse photon echo measurements on nitrogen delta-doped GaAs

〇Yuichi Takubo¹, Hikaru Ishizawa¹, Yoshiki Sakuma², Michio Ikezawa¹ (1.Tsukuba Univ., 2.NIMS)

1:30 PM - 3:30 PM

[11p-PA4-5] Temperature dependence of lateral photocurrent spectra of stacked InAs QDs layers with ultrafast carrier relaxation

〇Naoto Kumagai¹, Xiangmeng Lu², Yasuo Minami², Takahiro Kitada² (1.AIST, 2.Tokushima Univ.)

1:30 PM - 3:30 PM

[11p-PA4-6] Photon up-conversion in submonolayer InAs structures

〇Hiroto Mizuno¹, Yuwei Zhang¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

1:30 PM - 3:30 PM

[11p-PA4-7] Bi segregated structure in GaAs/GaAsBi/GaAs core-multishell nanowires

〇Teruyoshi Matsuda¹, Kosuke Yano¹, Kyohei Takada¹, Satoshi Shimomura¹, Yumiko Shimizu², Fumitaro Ishikawa¹ (1.Ehime Univ., 2.Toray Research Center)

1:30 PM - 3:30 PM

[11p-PA4-8] Solid Phase Epitaxy of Low-Temperature GaAs Layer Grown on Diamond Substrate

〇Toshiro Kamada¹, Kanji Iizuka¹ (1.NIT)

1:30 PM - 3:30 PM

▲ [11p-PA4-9] Correlation between the surface morphology and diffusion lengths of Ga adatom in GaP growth by MBE

〇(DC)Jose Alberto Piedra¹, Keisuke Yamane¹, Koki Shota¹, Hiroto Sekiguchi¹, Hiroshi Okada¹, Akihiro Wakahara¹ (1.Toyohashi Univ. of Tech.)

1:30 PM - 3:30 PM

[11p-PA4-10] Self-Formation of InAs Quantum Dots on SiO_x Films by Molecular Beam Deposition (3)

〇(B)Kazumu Sasaki¹, Akinori Makaino¹, Katuyoshi Sakamoto¹, Koichi Yamaguchi¹ (1.Univ. Electro-Comm)

1:30 PM - 3:30 PM

[11p-PA4-11] Influence of In segregation on InAs QDs growth in DWELL

〇Naoki Okada¹, Daigo Ikuno¹, Tao Wang¹, Shunsuke Ohkouchi², Nobuhiko Ozaki¹ (1.Wakayama Univ., 2.NEC corp.)

1:30 PM - 3:30 PM

[11p-PA4-12] Effects of Temperature on Growth of Ge Thin Film Si (001) substrate using tBGe

〇Koichiro Iwamoto¹, Hironori Akita¹, Syotaro Shirakura¹, Masahiro Kawano¹, Hidetoshi Suzuki¹ (1.Miyazaki Univ.)

1:30 PM - 3:30 PM

[11p-PA4-13] GaSb thickness dependence of InAs / GaSb superlattice grown by the metalorganic chemical vapor deposition growth method analyzed by Raman scattering measurement

〇Taiki Aso¹, Koji Maeda¹, Masakazu Arai¹, Yuya Yamagata¹ (1.Miyazaki Univ.)

Oral presentation

[11p-S422-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Mon. Mar 11, 2019 1:45 PM - 5:00 PM S422 (S422)

Hidetoshi Suzuki(Miyazaki Univ.), Kou Matsumoto(Taiyo Nippon Sanso)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:30 PM

[11p-S422-1] [INVITED] What are alloy semiconductors ? -What is known - what remains to be revealed.-

〇Akio Sasaki¹ (1.Kyoto University)

2:30 PM - 2:45 PM

[11p-S422-2] Effect of a single-sided AlGaAs layer on InAs/GaAs quantum dot infrared photodetectors

〇Hirofumi Yoshikawa^1,3, Jinkwan Kwoen¹, Takahiro Doe^1,3, Makoto Izumi³, Satoshi Iwamoto^1,2, Yasuhiko Arakawa¹ (1.NanoQuine, Univ. of Tokyo, 2.IIS, Univ. of Tokyo, 3.SHARP)

2:45 PM - 3:00 PM

[11p-S422-3] Measurement temperature dependence of one-dimensional electronic state in closely-stacked InAs/GaAs quantum dot superlattices

〇Toshiyuki Kaizu^1,2, Takashi Kita¹ (1.Grad. Sch. of Eng., Kobe Univ, 2.CSREA, Kobe Univ.)

3:00 PM - 3:15 PM

△ [11p-S422-4] Growth of InAs/GaAs Bilayer Quantum Dots with Long-wavelength Emission

〇Wenbo Zhan¹, Jinkwan Kwoen¹, Katsuyuki Watanabe¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa¹ (1.NanoQuine, 2.IIS, Univ. of Tokyo)

3:30 PM - 3:45 PM

[11p-S422-5] MBE growth of 1.5-µm-band metamorphic InAs/GaInAs/GaAs quantum dots

〇Katsuyuki Watanabe¹, Wenbo Zhan¹, Masahiro Kakuda¹, Jinkwan Kwoen¹, Yasuhiko Arakawa¹ (1.NanoQuine, Univ. of Tokyo)

3:45 PM - 4:00 PM

[11p-S422-6] Optical property control of strain-engineered stacked InAs quantum dots
by modulated interlayers

〇(M2)Mikihito Suzuki¹, Kenichi Shimomura¹, Itaru Kamiya¹ (1.Toyota Tech. inst.)

4:00 PM - 4:15 PM

[11p-S422-7] Increase of volume density of InAs/GaAs quantum dots by In-flush technique

〇Masahiro Kakuda¹, Jinkwan Kwoen¹, Katsuyuki Watanabe¹, Yasuhiko Arakawa¹ (1.NanoQuine, UTokyo)

4:15 PM - 4:30 PM

[11p-S422-8] PL mapping analysis of in-plane ultrahigh-density InAs-QD layer (2)

〇(M1)Sho Tatsugi¹, Ryo Sugiyama¹, Koichi Yamaguchi¹ (1.Univ. of Electro-Comm.)

4:30 PM - 4:45 PM

△ [11p-S422-9] Photo-responsivity of GaAs films grown on glass using a large-grained Ge seed layer

〇Takeshi Nishida¹, Kenta Moto¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

4:45 PM - 5:00 PM

▲ [11p-S422-10] Below-Bandgap Photoluminescence Emission from SI GaAs substrates subjected to pre-MBE-growth annealing

〇(P)Ronel Intal Roca¹, Hiroto Mizuno¹, Mikihito Suzuki¹, Itaru Kamiya¹ (1.Toyota Technological Inst.)

Sessions

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11a-S422-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11a-S422-1] XRD measurements of GaAs nanowires with N and Bi

[11a-S422-2] Growth of GaAs/GaNAs Core-Multishell Nanowires on Silicon and SOI

[11a-S422-3] Electron activation energy in Si doped GaAsN as a function of Si impurity concentration

△ [11a-S422-4] Investigation on Annhilation of Point Defects in III-V-N Alloys by Proton Irradiation

[11a-S422-5] Fabrication of GaAsPN subcell toward monolithic III-V/Si multijunction solar cells

[11a-S422-6] Evaluation of Electrical Characteristics of GaAsN Films with Intentional Change of N Distribution

[11a-S422-7] PL polarization degree of GaAs Bi / GaAs multiple quantum well by Bi-irradiation alone

[11a-S422-8] Substrate surface index dependence of polarized PL spectrum of GaAs Bi / GaAs multiple quantum well

[11a-S422-9] Estimation of As and Sb incorporation into InAs/GaSb superlattice grown by MOVPE

[11a-S422-10] Comparison of thickness-dependence of structural degradation in tensile-strained GaAsSb and InGaAs layers grown on InP substrates

[11p-PA4-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11p-PA4-1] First-Pinciples Calculation of Annihilation Process of Nitorogen-Related Point Defects in GaPN

[11p-PA4-2] Effect of Gate-Channel Distance Parameters on Electrical Properties of GaInSb Channel HEMT Structure

[11p-PA4-3] Fabrication of QD lasers including in-plane ultrahigh-density InAs QD layers

[11p-PA4-4] Three-pulse photon echo measurements on nitrogen delta-doped GaAs

[11p-PA4-5] Temperature dependence of lateral photocurrent spectra of stacked InAs QDs layers with ultrafast carrier relaxation

[11p-PA4-6] Photon up-conversion in submonolayer InAs structures

[11p-PA4-7] Bi segregated structure in GaAs/GaAsBi/GaAs core-multishell nanowires

[11p-PA4-8] Solid Phase Epitaxy of Low-Temperature GaAs Layer Grown on Diamond Substrate

▲ [11p-PA4-9] Correlation between the surface morphology and diffusion lengths of Ga adatom in GaP growth by MBE

[11p-PA4-10] Self-Formation of InAs Quantum Dots on SiO_x Films by Molecular Beam Deposition (3)

[11p-PA4-11] Influence of In segregation on InAs QDs growth in DWELL

[11p-PA4-12] Effects of Temperature on Growth of Ge Thin Film Si (001) substrate using tBGe

[11p-PA4-13] GaSb thickness dependence of InAs / GaSb superlattice grown by the metalorganic chemical vapor deposition growth method analyzed by Raman scattering measurement

[11p-S422-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11p-S422-1] [INVITED] What are alloy semiconductors ? -What is known - what remains to be revealed.-

[11p-S422-2] Effect of a single-sided AlGaAs layer on InAs/GaAs quantum dot infrared photodetectors

[11p-S422-3] Measurement temperature dependence of one-dimensional electronic state in closely-stacked InAs/GaAs quantum dot superlattices

△ [11p-S422-4] Growth of InAs/GaAs Bilayer Quantum Dots with Long-wavelength Emission

[11p-S422-5] MBE growth of 1.5-µm-band metamorphic InAs/GaInAs/GaAs quantum dots

[11p-S422-6] Optical property control of strain-engineered stacked InAs quantum dots
by modulated interlayers

[11p-S422-7] Increase of volume density of InAs/GaAs quantum dots by In-flush technique

[11p-S422-8] PL mapping analysis of in-plane ultrahigh-density InAs-QD layer (2)

△ [11p-S422-9] Photo-responsivity of GaAs films grown on glass using a large-grained Ge seed layer

▲ [11p-S422-10] Below-Bandgap Photoluminescence Emission from SI GaAs substrates subjected to pre-MBE-growth annealing

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