[A-3-1] Overgrowth and Characterization of Epitaxial Silicon on Patterned NiSi2 Grown by Molecular Beam Epitaxy

Akitoshi Ishizaka, Patricia A. Cullen, Yasuhiro Shiraki (1.Central Research Laboratory, Hitachi, Ltd.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[A-3-2] Via-Hole Filling with Molybdenum by RF Bias Sputtering

T. Mogami, M. Morimoto, H. Okabayashi (1.Microelectronics Research Labs., NEC Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download

[A-3-3] Self-Aligned Titanium Silicidation by Lamp Annealing

K. Tsukamoto, T. Okamoto, M. Shimizu, T. Matsukawa, H. Harada (1.LSI R&D Lab., Mitsubishi Electric Corp.)

1984 International Conference on Solid State Devices and Materials |PDF Download

[A-3-4] Surface Morphology and Corrosion in Aluminum Alloy Thin Films

SHOJI MADOKORO, SHIRO HAGIWARA, SHINTARO USHIO (1.Electron Device Division, OKI Electric Industry Co., Ltd)

1984 International Conference on Solid State Devices and Materials |PDF Download

[A-3-5] Electromigration Studies of Al-Intermetallic Structures

P. S. Ho, T. Kwok, H. -C. W. Huang (1.IBM Thomas J. Watson Research Center, 2.IBM General Technology Division)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] Uniformity of In-Alloyed LEC GaAs

H. Kimura, C. B. Afable, H. M. Olsen, A. T. Hunter, K. T. Miller, H. V. Winston (1.Hughes Research Laboratories)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] Nearly-Dislocation-Free, Semi-Insulating GaAs Grown in B2O3 Encapsulant

Hideo Nakanishi, Hiroki Kohda, Kohji Yamada, Keigo Hoshikawa (1.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] Homogeneity Improvement of LEC-Grown, Semi-Insulating GaAs by Heat-Treatment

Shintaro MIYAZAWA, Takashi HONDA, Kazuo WATANABE (1.Atsugi Electrical Communication Laboratory Nippon Telegraph and Telephone Public Corporation)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-2-1] High Field Transport and Advanced Modeling Techniques for Submicron Devices

Eugene CONSTANT (1.CENTRE HYPERFREQUENCES ET SEMICONDUCTEURS, LA CNRS N° 287 GRECO MICROONDE N° 11, UNIVERSITE DE LILLE I. Bat P3)

1984 International Conference on Solid State Devices and Materials |PDF Download

[B-2-2] Very Short Channel MOSFET's-Physics and Technology

W. Fichtner (1.AT & T Bell Laboratories)

1984 International Conference on Solid State Devices and Materials |PDF Download