[L-9-1] CO₂ conversion with light and water by GaN photo-electrode

S. Yotsuhashi¹, M. Deguchi¹, Y. Zenitani¹, R. Hinogami¹, H. Hashiba¹, Y. Yamada¹, K. Ohkawa² (1.Panasonic Corp., 2.Tokyo Univ. of Sci. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-9-2] Local Characterization of Multicrystalline Silicon Solar Cells through Photothermal and Potential Measurements by Scanning Probe Microscopy

K. Hara¹, T. Takahashi¹ (1.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-9-3] Impact of light element impurities on crystalline defect generation in silicon substrate

T. Tachibana¹, T. Sameshima¹, T. Kojima², K. Arafune³, K. Kakimoto⁴, Y. Miyamura⁵, H. Harada⁵, T. Sekiguchi⁵, Y. Ohshita², A. Ogura¹ (1.Meiji Univ., 2.Toyota Tech. Inst., 3.Univ. of Hyogo, 4.Kyusyu Univ., 5.NIMS , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-9-4] Flash-Lamp-Induced Explosive Crystallization of Amorphous Films Leaving Behind Periodic Microstructures

K. Ohdaira^1,2, H. Matsumura¹ (1.JAIST, 2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[L-9-5] Preparation of a Diameter-controlled Silicon Nanowire Array by Metal Assisted Chemical Etching using Silica Nanoparticles (MACES)

S. Kato¹, Y. Watanabe¹, Y. Kurokawa¹, A. Yamada¹, Y. Ohta², Y. Niwa², M. Hirota² (1.Tokyo Tech, 2.Nissan Res. Center , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[M-1-1] Progress in Nonpolar and Semipolar GaN-base Materials and Devices

J. S. Speck¹ (1.Univ. of California, Santa Barbara , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[M-1-2] Tilted domain and indium content of MOVPE-grown InGaN layer on m-plane GaN substrate

K. Shojiki¹, T. Hanada^1,2, T. Shimada¹, Y. Liu^1,2, R. Katayama^1,2, T. Matsuoka^1,2 (1.Tohoku Univ., 2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[M-1-3] Effect of Phase Purity on Dislocation Density of PR-MOVPE-Grown InN

T. Iwabuchi¹, Y. Liu^1,2, T. Kimura^1,2, Y. Zhang^1,2, K. Prasertsuk¹, R. Katayama^1,2, T. Matsuoka^1,2 (1.Tohoku Univ., 2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[M-1-4] Surface Supersaturation in Nucleus and Spiral Growth of GaN in MOVPE

T. Akasaka¹, Y. Kobayashi¹, M. Kasu¹ (1.NTT Basic Res. Labs. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[M-1-5] Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC (000-1) Substrate by Molecular-Beam Epitaxy

H. Okumura¹, T. Kimoto¹, J. Suda¹ (1.Kyoto Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download