[P-3-2] Saturation Behavior in the Generation of Interface Traps by Hot-Carrier Stress in Nanoscale MOSFETs

M. Hu¹、T. Yamane¹、T. Tsuchiya¹ (1.Shimane Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-3] Investigation of Temperature Dependence on DC and Low-Frequency Noise Characteristics in Uniaxial Tensile Strained nMOSFETs

S. C. Tsai¹、S. L. Wu²、J. F. Chen¹、S. J. Chang¹、C. Y. Chang¹、P. C. Huang¹、C. Y. Wu²、M. S. Chen³、Y. C. Cheng³、O. Cheng³ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ.、3.United Microelectronics Corp. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-4] Impact of Interface State Density on MOSFET Local Oxide Capacitance Degradation during Hot-Carrier Stress

I. Starkov¹、H. Ceric¹ (1.TU Wien , Austria)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-5] The Effect of La₂O₃ Capping Layer Thickness on Hot Carrier Degradation of n-MOSFETs with High-k/Metal Gate Stack

D. W. Kim¹、S. H. Lee¹、C. G. Kim¹、T. K. Oh²、B. K. Kang¹ (1.Pohang Univ. Sci. Tech.、2.Hynix Semiconductor Inc. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-6] Characterization of Oxide Traps in 28 nm pMOSFETs with Σ-Shaped SiGe-S/D by Utilizing Random Telegraph Noise (RTN)

B. C. Wang¹、S. L. Wu²、S. J. Chang¹、C. T. Huang³、O. Cheng³ (1.National Cheng Kung Univ.、2.Cheng Shiu Univ.、3.United Microelectronics Corp. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-7] Hot-Carrier Effects on High-frequency Characteristics of RF LDMOS Transistors

K. M. Chen¹、Z. W. Mou²、H. C. Kuo²、C. S. Chiu¹、B. Y. Chen¹、W. D. Liu¹、M. Y. Chen³、Y. C. Yang³、K. L. Wang³、G. W. Huang^1,2 (1.National Nano Device Labs.、2.National Chiao Tung Univ.、3.United Microelectronics Corp. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-8] Impact of OFF-state Degradation under Dynamic Stress on Reliability of Nanoscale n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors at Elevated Temperature

N. H. Lee¹、K. J. Kim¹、H. W.Kim²、B. K.Kang¹ (1.POSTECH、2.Samsung Electronics Corp. Ltd. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-9] Modeling Subthreshold Current and Threshold Voltage of Fully-Depleted Double-gate Junctionless(J-less) Transistors

Z. M. Lin¹、H. C. Lin^1,2、K. M. Liu³、T. Y. Huang¹ (1.National Chiao Tung Univ.、2.Labs of National Nano Device、3.National Dong Hwa Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-10] Integration of InGaAs Nanowire Vertical Surrounding-Gate Transistors on Si

K. Tomioka^1,2、M. Yoshimura¹、T. Fukui¹ (1.Hokkaido Univ.、2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-3-11] Body Channel Type Vertical MOSFET to Suppress Gate Leakage Current

T. Sasaki^1,2、T. Endoh^1,2 (1.Tohoku Univ.、2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード