[PS-4-03] Role of Al₂O₃ Thin Layer to Improve The Switching Properties in Ta₅Si₃ Based CBRAM Device

^○D. Kumar¹, R. Aluguri¹, U. Chand¹, S. Chandrasekaran¹, T. -Y. Tseng¹ (1.National Chiao Tung Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:39 〜 11:41 |PDF ダウンロード

[PS-4-04] The effect of TiW thickness on non-polar to bipolar switching transformation in ZrO2-based CBRAM

^○S. Chandrasekaran¹, F. M. Simanjuntak², T. Y. Tseng¹ (1.National Chiao Tung Univ. (Taiwan), 2.National Dong Hwa Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:41 〜 11:43 |PDF ダウンロード

[PS-4-05] An Investigation of Light Triggering Effect on the Programming of Gate-less Anti-fuse Cells

Z. -H. Chen¹,^○Y. Yeh¹, P. Cheng¹, C. J. Lin¹, Y. King¹ (1.National Tsing Hua Univ. (Taiwan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:43 〜 11:45 |PDF ダウンロード

[PS-4-06] Error-Correction & Set/Reset Verify Strategy of Storage Class Memory (SCM) for SCM/NAND Flash Hybrid and All-SCM Storage

^○C. Matsui¹, K. Takeuchi¹ (1.Chuo Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:45 〜 11:47 |PDF ダウンロード

[PS-4-07] Experimental Investigation of Localized Stress Induced Leakage Current Distribution in Gate Dielectrics Using Array Test Circuit

^○H. Park¹, T. Suwa¹, R. Kuroda¹, A. Teramoto¹, S. Sugawa¹ (1.Tohoku Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:47 〜 11:49 |PDF ダウンロード

[PS-4-08] Impact of Mechanical Stress to Cell Characteristics in Vertically Stacked NAND Flash Structure

^○Y. Oh¹, T. Ono², Y. Song¹ (1.Hanyang Univ. (Korea), 2.Tohoku Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:49 〜 11:51 |PDF ダウンロード

[PS-4-09] Impacts of Low Temperature formed SiO₂ Tunneling and Si₃N₄/HfO₂ Trapping Layers on Gate-All-Around Charge-Trapping Flash Memory Devices

^○P. -Y. Lin¹, K. -S. Chang-Liao¹, H. -K. Fang¹, C. -H. Cheng¹, W. -H. Huang², C. -H. Shen², J. -M. Shieh² (1.National Tsing Hua Univ. (Taiwan), 2.National Nano Device Labs. (Taiwan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:51 〜 11:53 |PDF ダウンロード

[PS-4-10] New Tunnel FET Charge-Trapping Memory with Large Memory Window for Ultra Low Power Operation

^○H. Kino¹, T. Fukushima¹, T. Tanaka¹ (1.Tohoku Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:53 〜 11:55 |PDF ダウンロード

[PS-4-11] V_th variation of string SONOS NAND Flash depending on single grain boundary and stored electron charges in an adjacent cell

^○H. Oh¹, J. Kim¹, R. -H. Baek¹, J. -S. Lee¹ (1.POSTECH (Korea))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:55 〜 11:57 |PDF ダウンロード

[PS-4-12] Poly-Ge Tri-gate Nanowire Junctionless Charge-Trapping Flash Devices Formed with Low-Temperature Processes for 3D Memory Applications

^○Y. -C. Lu¹, K. -S. Chang-Liao¹, H. -K. Fang¹, K. -Y. Li¹, W. -H. Huang², C. -H. Shen², J. -M. Shieh² (1.National Tsing Hua Univ. (Taiwan), 2.National Nano Device Labs. (Taiwan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:57 〜 11:59 |PDF ダウンロード