Poster presentation

[18p-PB5-1~11] 8.3 Plasma deposition of thin film and surface treatment

Thu. Sep 18, 2014 1:30 PM - 3:30 PM PB5 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB5会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[18p-PB5-1] Production of RF ring-shaped hollow discharge magnetized plasma with permanent magnets and its spatial profile for plasma processing

^○Yasunori Ohtsu¹, Toshiaki Yanagise¹, Jyunta Eguchi¹, Yoshiki Yahata¹ (Saga Univ.¹)

1:30 PM - 3:30 PM

[18p-PB5-2] Sputtering of the Two Discharge Modes on High-Vacuum Planar Magnetron Sputtering

^○Takahiro Ohno¹, Naokazu Asakura¹, Hirofumi Kawamura¹, Goh Usami¹, Takayoshi Funaki¹, Masatoshi Itoh¹, Yoshio Uhara¹, Tsutomu Miura¹, Shigeru Saito¹ (TUS¹)

1:30 PM - 3:30 PM

[18p-PB5-3] Formation of DLC films by Facing Targets type HPPS Penning Discharge

^○Takashi Kimura¹, Kingo Azuma², Setsuo Nakao³ (Nagoya Inst. of Tech.¹, Univ. of Hyogo², AIST-Chubu³)

1:30 PM - 3:30 PM

[18p-PB5-4] Improvement of DLC film quality formed by dielectric barrier discharge plasma

^○Kazuya Tada¹, Shinji Yasui¹, Yasutaka Asai¹ (Nagoya Institute Of Technology¹)

1:30 PM - 3:30 PM

[18p-PB5-5] Characterization of Fluorinated Amorphous Carbon Films Fabricated by Plasma Spray on Solid Thin Films Formed from PFC gas Condensed at Cryogenic Temperature

^○Haruka Soga¹, Kota Yamai¹, Kyohei Morikawa¹, Tetuya Sato¹, Kiyokazu Nakagawa¹ (Univ. Yamanashi¹)

1:30 PM - 3:30 PM

[18p-PB5-6] Fabrication of a-TiNx thin films at Low Temperature by Atomic Layer Deposition Technique

^○Keita Seki¹, Byonhaku Yuu¹, Tetuya Satou¹ (Yamanashi Univ.¹)

1:30 PM - 3:30 PM

[18p-PB5-7] Self-formation of ZnO nanoparticle domains by a coaxial gas-flow low-pressure pulse plasma

^○Hiroki Shirahata¹, Satoru Iizuka¹ (Tohoku Univ.¹)

1:30 PM - 3:30 PM

[18p-PB5-8] Analysis of Plasma Interactions with Mist for Formation of ZnO Thin Films Using Atmospheric-Pressure Plasma Assisted Mist CVD

^○Kosuke Takenaka¹, Giichiro Uchida¹, Yuichi Setsuhara¹ (Osaka Univ.¹)

1:30 PM - 3:30 PM

[18p-PB5-9] Changes in the local atomic structure in SiNx films grown by VHF-PECVD

^○Shin-ichi Kobayashi¹ (Tokyo Polytechnic Univ.¹)

1:30 PM - 3:30 PM

[18p-PB5-10] Influence of Plasma Nitriding in Additional Elements of Various Aluminum Alloys

^○Kazato Sakamoto¹, Yuichiro Takemura¹ (Graduated School, Kinki Univ.¹)

1:30 PM - 3:30 PM

△ [18p-PB5-11] Optimization for Surface Functionalization of the CNT Dot-Array by Using Capillary Atmospheric Pressure Plasma Jet

^○Mitsuru Okada¹, Abuzairi Tomy^2,3, Han Chou¹, Poespawati Nji³, Masaaki Nagatsu^1,2 (Shizuoka Univ.¹, Shizuoka Univ.², Universitas Indonesia.³)

Oral presentation

[19a-S9-1~11] 8.3 Plasma deposition of thin film and surface treatment

Fri. Sep 19, 2014 9:00 AM - 12:00 PM S9 (S9)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[19a-S9-1] Preparation of Composite Thin Films by Sputtering Using Powder Target

^○Tamiko Ohshima¹, Takashi Maeda¹, Yuki Tanaka¹, Hiroharu Kawasaki¹, Yoshihito Yagyu¹, Yoshiaki Suda¹ (National Institute of Technology, Sasebo College¹)

9:15 AM - 9:30 AM

[19a-S9-2] Uniform Deposition of Al doped ZnO Films Using Off-axis RF Magnetron Sputtering

^○Yoshinobu Matsuda¹, Hironobu Yokoyama¹, Shunsuke Oyamada¹, Masanori Shinohara¹ (Nagasaki Univ.¹)

9:30 AM - 9:45 AM

[19a-S9-3] Preparation of the reduced light-induced degradation a-Si:H films using a multi-hollow-cathode plasma with balanced power feeding

^○Takaya Suzuki¹, Hiroshi Muta¹, Satashi Nishida¹, Shizuma Kuribayashi¹ (E.R.E.S Graduate School of Eng., Gifu Univ.¹)

9:45 AM - 10:00 AM

△ [19a-S9-4] Dependence of RF power on film structures and electric properties of amorphous carbon films grown by plasma-enhanced chemical vapor deposition system

^○Hirotsugu Sugiura¹, Lingyun Jia¹, Da Xu¹, Masayuki Nakamura¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

10:00 AM - 10:15 AM

[19a-S9-5] Simulation of Capacitively-coupled RF Plasmas in Tetrametylsilane for Diamond-Like Carbon Coating

^○Akinori Oda¹, Satoru Kawaguchi², Kohki Satoh², Hiroyuki Kousaka³, Takayuki Ohta⁴ (Chiba Inst. Technol.¹, Muroran Inst. Technol.², Nagoya Univ.³, Meijo Univ.⁴)

10:15 AM - 10:30 AM

[19a-S9-6] Enhancement of metal evaporation induced by hydrogen plasma and its application to high-rate deposition

^○Hiromasa Ohmi¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹ (Osaka Univ.¹)

Break 10:30～10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[19a-S9-7] Interfacial Strain of Graphene with Atomic Layer Deposition

^○Takeshi Kitajima¹, Toshiki Nakano¹ (Nat. Def. Acad.¹)

11:00 AM - 11:15 AM

△ [19a-S9-8] Surface Chemistry and doping efficiency of silicon nanocrystals

^○Michihiro Sugaya¹, Ding Yi¹, Zhou Shu¹, Tomohiro Nozaki¹ (Titech¹)

11:15 AM - 11:30 AM

△ [19a-S9-9] Synthesis of Au/Pd alloy nanoparticles by a microwave-induced plasma in liquid

^○(M1)Hiroaki Shirai¹, Yohei Ishida¹, Tetsu Yonezawa¹, Tomoharu Tokunaga² (Hokkaido Univ.¹, Nagoya Univ.²)

11:30 AM - 11:45 AM

△ [19a-S9-10] Fluorescent gold nanoparticles synthesized by sputtering in PEG containing protective agent

^○Taiki Sumi¹, Yohei Ishida¹, Tetsu Yonezawa¹ (Hokkaido Univ.¹)

11:45 AM - 12:00 PM

[19a-S9-11] Measurement of Free Radicals in Plasma Activated Water Using UV Absorption Spectroscopy

^○Jun-Seok Oh¹, Kodai Sakuramoto¹, Hiroshi Furuta^1,2, Akimitsu Hatta^1,2 (Kochi Univ. Technol.¹, Center for Nanotechnology, Kochi Univ. Technol.²)

Oral presentation

[19p-S9-1~5] 8.3 Plasma deposition of thin film and surface treatment

Fri. Sep 19, 2014 1:15 PM - 2:30 PM S9 (S9)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:00～13:15 （12:00 PM - 1:15 PM）

1:15 PM - 1:30 PM

[19p-S9-1] Plasma indicator(1):Metachromasy of inorganic oxide under a plasma and plasma diagnostication

^○Yu Yamakawa^1,2, Hirokazu Miyazaki¹, Kazuhiro Uneyama¹, Hiroshi Inoue¹, Masahiro Shimizu², Masayuki Nishi², Kazuyuki Hirao² (Sakura Color Products Corp.¹, Kyoto Univ.²)

1:30 PM - 1:45 PM

[19p-S9-2] Plasma Indicator (2)～Plasma diagnostic technique by Plasma Indicator～

^○Keita Hishikawa^1,2, Hirokazu Miyazaki¹, Kazuhiro Uneyama¹, Hiroshi Inoue¹, Osamu Sakai² (Sakura Color Products Corp.¹, Kyoto Univ.²)

1:45 PM - 2:00 PM

[19p-S9-3] Effect of Substrate Temperature when Exposing Gallium Nitride Film in Plasma

^○Daisuke Ogawa¹, Yoshitaka Nakano¹, Keiji Nakamura¹ (Chubu University¹)

2:00 PM - 2:15 PM

[19p-S9-4] Composition of atomic nitrogen on SiC surface irradiated by remote nitrogen plasma: Effect of active species

^○masaharu shimabayashi¹, kazuaki kurihara², koichi sasaki¹ (Hokkaido Univ.¹, Toshiba Corp.²)

2:15 PM - 2:30 PM

[19p-S9-5] Influence of argon plasma on the Si and Al₂O₃ substrates.

^○Masashi Seki¹, Chiaki Tanuma² (TOSHIBA TEC CORPORATION¹, Hosei Univ.²)

Sessions

08. Plasma Electronics » 8.3 Plasma deposition of thin film and surface treatment

[18p-PB5-1~11] 8.3 Plasma deposition of thin film and surface treatment

[18p-PB5-1] Production of RF ring-shaped hollow discharge magnetized plasma with permanent magnets and its spatial profile for plasma processing

[18p-PB5-2] Sputtering of the Two Discharge Modes on High-Vacuum Planar Magnetron Sputtering

[18p-PB5-3] Formation of DLC films by Facing Targets type HPPS Penning Discharge

[18p-PB5-4] Improvement of DLC film quality formed by dielectric barrier discharge plasma

[18p-PB5-5] Characterization of Fluorinated Amorphous Carbon Films Fabricated by Plasma Spray on Solid Thin Films Formed from PFC gas Condensed at Cryogenic Temperature

[18p-PB5-6] Fabrication of a-TiNx thin films at Low Temperature by Atomic Layer Deposition Technique

[18p-PB5-7] Self-formation of ZnO nanoparticle domains by a coaxial gas-flow low-pressure pulse plasma

[18p-PB5-8] Analysis of Plasma Interactions with Mist for Formation of ZnO Thin Films Using Atmospheric-Pressure Plasma Assisted Mist CVD

[18p-PB5-9] Changes in the local atomic structure in SiNx films grown by VHF-PECVD

[18p-PB5-10] Influence of Plasma Nitriding in Additional Elements of Various Aluminum Alloys

△ [18p-PB5-11] Optimization for Surface Functionalization of the CNT Dot-Array by Using Capillary Atmospheric Pressure Plasma Jet

[19a-S9-1~11] 8.3 Plasma deposition of thin film and surface treatment

[19a-S9-1] Preparation of Composite Thin Films by Sputtering Using Powder Target

[19a-S9-2] Uniform Deposition of Al doped ZnO Films Using Off-axis RF Magnetron Sputtering

[19a-S9-3] Preparation of the reduced light-induced degradation a-Si:H films using a multi-hollow-cathode plasma with balanced power feeding

△ [19a-S9-4] Dependence of RF power on film structures and electric properties of amorphous carbon films grown by plasma-enhanced chemical vapor deposition system

[19a-S9-5] Simulation of Capacitively-coupled RF Plasmas in Tetrametylsilane for Diamond-Like Carbon Coating

[19a-S9-6] Enhancement of metal evaporation induced by hydrogen plasma and its application to high-rate deposition

[19a-S9-7] Interfacial Strain of Graphene with Atomic Layer Deposition

△ [19a-S9-8] Surface Chemistry and doping efficiency of silicon nanocrystals

△ [19a-S9-9] Synthesis of Au/Pd alloy nanoparticles by a microwave-induced plasma in liquid

△ [19a-S9-10] Fluorescent gold nanoparticles synthesized by sputtering in PEG containing protective agent

[19a-S9-11] Measurement of Free Radicals in Plasma Activated Water Using UV Absorption Spectroscopy

[19p-S9-1~5] 8.3 Plasma deposition of thin film and surface treatment

[19p-S9-1] Plasma indicator(1):Metachromasy of inorganic oxide under a plasma and plasma diagnostication

[19p-S9-2] Plasma Indicator (2)～Plasma diagnostic technique by Plasma Indicator～

[19p-S9-3] Effect of Substrate Temperature when Exposing Gallium Nitride Film in Plasma

[19p-S9-4] Composition of atomic nitrogen on SiC surface irradiated by remote nitrogen plasma: Effect of active species

[19p-S9-5] Influence of argon plasma on the Si and Al₂O₃ substrates.