Oral presentation

[10p-N323-1~12] 13.3 Insulator technology

Fri. Sep 10, 2021 1:00 PM - 4:15 PM N323 (Oral)

Keisuke Yamamoto(Kyushu Univ.), Yuuichiro Mitani(Tokyo City University)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[10p-N323-1] Study of deposition temperature dependence of GeO2 films by CVD method

〇Takehito Shibuya¹, Hirotaka Iino¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

1:15 PM - 1:30 PM

[10p-N323-2] Study on improvement of GeO2 film quality by plasma nitriding

〇Keisuke Ito¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

1:30 PM - 1:45 PM

[10p-N323-3] Study of Introduction of Post Metallization Annealing at the GeO2/Ge Interface

〇Kugo Matsuura¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

1:45 PM - 2:00 PM

[10p-N323-4] Study of improvement of GeO₂ film quality and GeO₂/Ge interface state by PMA of Gold

〇Akari Kekke¹, Hirotaka Iino¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

2:00 PM - 2:15 PM

[10p-N323-5] Evaluation of PMA-GeO₂ and improvement of characteristics utilizing it

〇Hirotaka Iino¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

2:15 PM - 2:30 PM

▲ [10p-N323-6] Evaluation of electron and hole slow trap density in Al₂O₃/GeO_x/p-Ge gate stacks by C-V measurements

〇Mengnan Ke¹, Takenaka Mitsuru², Shinichi Takagi² (1.Tokyo Univ. of Sci., 2.Univ. of Tokyo)

2:45 PM - 3:00 PM

△ [10p-N323-7] Confirmation of Interface Dipole Modulation Generation by Hard X-ray Photoemission Spectroscopy

〇(M1)Yoshiharu Kirihara¹, Ryota Tsujiguti¹, Akira Yasui², Noriyuki Miyata³, Hiroshi Nohira¹ (1.Tokyo City Univ., 2.JASRI, 3.AIST)

3:00 PM - 3:15 PM

[10p-N323-8] LPCVD SiN Film Breakdown and N₂-anneal Temperature(Ⅰ)TDDB and ESR Evaluations

〇HISATSUGU KURITA¹, MASATAKA NAKAMURA¹, HAYATO MIYAGAWA², YOSHIAKI KAMIGAKI³ (1.ROHM Hamamatsu., 2.Kagawa Univ., 3.E&B Research Lab.)

3:15 PM - 3:30 PM

[10p-N323-9] LPCVD SiN Film Breakdown and N₂-anneal Temperature (Ⅱ): ESR and FTIR Evaluations

〇Hayato Miyagawa¹, Hisatsugu Kurita², Masataka Nakamura², Yoshiaki Kamigaki³ (1.Kagawa Univ., 2.ROHM Hamamatsu., 3.E&B Research Lab.)

3:30 PM - 3:45 PM

[10p-N323-10] Investigation of Low Temperature Oxidation of Si Substrates Using Chemical Solutions

〇Hiroki Takahashi¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.TUAT)

3:45 PM - 4:00 PM

[10p-N323-11] Evaluation of Charge Distribution in SiO₂ Film by Substrate Charge Measurement During Etching in HF solution

〇Masashi Ogata¹, Takashi Shishikura¹, Ryu Hasunuma¹ (1.Univ. of Tsukuba)

4:00 PM - 4:15 PM

[10p-N323-12] Evaluation of Dielectric Degradation in MOS Structures Under Reverse-Bias Stress Using Time-Dependent Impedance Spectroscopy (TDIS)

〇Tomohiro Kuyama^1,2, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ., 2.JSPS Research Fellow)

Poster presentation

[23a-P05-1~2] 13.3 Insulator technology

Thu. Sep 23, 2021 9:00 AM - 10:40 AM P05 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 10:40 AM

[23a-P05-1] Dependence of penetration barrier of alkaline earth metal ions into SiN_x and SiO_x films on ion radius

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric)

9:00 AM - 10:40 AM

[23a-P05-2] Determination of the charge centroids of electrons and holes trapped in the charge trap layer of MONOS-type nonvolatile memory elements

〇Akari Matsumoto¹, Yuta Nishigaki¹, Kiyoteru Kobayashi¹ (1.Tokai Univ.)

Sessions

13 Semiconductors » 13.3 Insulator technology

[10p-N323-1~12] 13.3 Insulator technology

[10p-N323-1] Study of deposition temperature dependence of GeO2 films by CVD method

[10p-N323-2] Study on improvement of GeO2 film quality by plasma nitriding

[10p-N323-3] Study of Introduction of Post Metallization Annealing at the GeO2/Ge Interface

[10p-N323-4] Study of improvement of GeO₂ film quality and GeO₂/Ge interface state by PMA of Gold

[10p-N323-5] Evaluation of PMA-GeO₂ and improvement of characteristics utilizing it

▲ [10p-N323-6] Evaluation of electron and hole slow trap density in Al₂O₃/GeO_x/p-Ge gate stacks by C-V measurements

△ [10p-N323-7] Confirmation of Interface Dipole Modulation Generation by Hard X-ray Photoemission Spectroscopy

[10p-N323-8] LPCVD SiN Film Breakdown and N₂-anneal Temperature(Ⅰ)TDDB and ESR Evaluations

[10p-N323-9] LPCVD SiN Film Breakdown and N₂-anneal Temperature (Ⅱ): ESR and FTIR Evaluations

[10p-N323-10] Investigation of Low Temperature Oxidation of Si Substrates Using Chemical Solutions

[10p-N323-11] Evaluation of Charge Distribution in SiO₂ Film by Substrate Charge Measurement During Etching in HF solution

[10p-N323-12] Evaluation of Dielectric Degradation in MOS Structures Under Reverse-Bias Stress Using Time-Dependent Impedance Spectroscopy (TDIS)

[23a-P05-1~2] 13.3 Insulator technology

[23a-P05-1] Dependence of penetration barrier of alkaline earth metal ions into SiN_x and SiO_x films on ion radius

[23a-P05-2] Determination of the charge centroids of electrons and holes trapped in the charge trap layer of MONOS-type nonvolatile memory elements

Authenticate

Sessions

13 Semiconductors » 13.3 Insulator technology

[10p-N323-1~12] 13.3 Insulator technology

▲ [10p-N323-6] Evaluation of electron and hole slow trap density in Al2O3/GeOx/p-Ge gate stacks by C-V measurements

△ [10p-N323-7] Confirmation of Interface Dipole Modulation Generation by Hard X-ray Photoemission Spectroscopy

[23a-P05-1~2] 13.3 Insulator technology

Authenticate

▲ [10p-N323-6] Evaluation of electron and hole slow trap density in Al₂O₃/GeO_x/p-Ge gate stacks by C-V measurements