[PC-8-5] Hydrogenation of Polysilicon Thin Film Transistors Using Inductively Coupled Plasma

Sung-Hoi Hur, Kang-Sik Choi, Choong-Ki Kim, Chul-Hi Han (1.Center for Electro-Optics Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, 2.Samsung Electronics Co. Ltd., 3.LG Semicon Co. Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-8-6] Grain Boundary Structure and Bandtail Transport in High Mobility Poly-Si TFTs

Tadashi Serikawa, Seiiti Shirai, Sadao Takaoka, Kazuo Nakagawa, Kenichi Oto, Kazuo Murase, Shuichi Ishida (1.NTT Interdisciplinary Research Labs., 2.Faculty of Science, Osaka University, 3.Science University of Tokyo in Yamaguchi)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-V-1] Blue/Green Light Emitters Based on II-VI Heterostructures on ZnSe Substrates

C. BONEY, D. B. EASON, Z. YU, W. C. HUGHES, J. W. COOK, JR., J. F. SCHETZINA, G. CANTWELL, W. C. HARSCH (1.Department of Physics, North Carolina State University, 2.Eagle-Picher Laboratory)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-V-2] Observation of <100> Dark Line Defects in Optically Degraded ZnSxSe1-x-Based LEDs by Transmission Electron Microscopy

L. Salamanca-Riba, L. H. Kuo (1.Department of Materials and Nuclear Engineering, University of Maryland)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-V-3] RT Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes

Hiroyuki Okuyama, Norikazu Nakayama, Satoshi Itoh, Masao Ikeda, Akira Ishibashi (1.Sony Corporation Research Center)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-V-4] Low Threshold and Low Divergence Blue Vertical-Cavity Surface-Emitting Laser Diodes

Toshiya YOKOGAWA, Shigeo YOSHII, Ayumu TSUJIMURA, Yoichi SASAI, James MERZ (1.Matsushita Electric Ind. Co., Ltd., Semiconductor Research Center, 2.Department of Electrical Engineering, University of Notre Dame)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-V-5] P- Type Conducting ZnSe and ZnSSe by N2-Gas Doping during Molecular Beam Epitaxy

Yuji HISHIDA, Tomoyuki YOSHIE, Katsumi YAGI, Keiichi YODOSHI, Tatsuhiko NIINA (1.Microelectronics Research Center, Sanyo Electric Co., Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-V-6] Characterization and Improvements of Metal-p Type ZnSe Interfaces

Koshi Ando, Tomokazu Hirakawa, Akira Ohki, Tetsuichirou Ohno, Hiroki Yonezawa (1.Electrical and Electronic Department, Faculty of Engineering, Tottori University, 2.NTT Opto Electric Labs, 3.NTT Interdisciplinary Labs)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-V-7] Fabrication and Properties of GaN-Based Quantum Well Structure for Short Wavelength Light Emitter

Hiroshi AMANO, Isamu AKASAKI (1.Department of Electrical and Electronic Engineering, Meijo University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-V-8] InGaN Light-Emitting Diodes with Quantum Well Structures

Shuji NAKAMURA (1.Department of Research and Development, Nichia Chemical Industries, Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

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