[PC-4-1] Investigation of Non-Equilibrium Carrier Transport in Sub-0.1μm MOSFET's Based on Monte Carlo Analysis

Tamio Shimatani, Mitsumasa Koyanagi (1.Dept. of Machine Intelligence and System Engineering Intelligent System Design Laboratory, Tohoku University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-4-2] Tail Electron Hydrodynamic Model for Consistent Modeling of Impact Ionization and Gate Injection

Jae-Gyung Ahn, Young-June Park, Hong-Shick Min (1.ULSI Laboratory, LG Semicon, Co. Ltd., 2.Department. of Elec. Eng. and ISRC, Seoul Nat'l. University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-4-3] Study of Quasi-Two Dimensional Hole Gas Si/SixGe1-x/Si Quantum Wells

S. Cheon, S. C. Lee, S. Hong, K. -H. Yoo (1.Opto-Electronic Research Center, Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, 2.Electronics and Telecommunications Research Institute, 3.Korea Research Institute of Standards and Science)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-4-4] Fabrication and Transport Properties of Gate-All-Around Silicon Quantum Wire Transistor

K. Morimoto, Y. Hirai, K. Yuki, K. Morita (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-4-5] Extremely Large Amplitude of Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures

Hiroki ISHIKURO, Takuya SARAYA, Toshiro HIRAMOTO, Toshiaki IKOMA (1.Institute of Industrial Science, University of Tokyo, 2.Texas Instruments Tsukuba Research & Development Center Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-4-6] Guided Modes of Electron Wave in a Si-Quantum Wire

Yasushi OKAWA, Hideaki TSUCHIYA, Tanroku MIYOSHI (1.Department of Electrical and Electronics Engineering, Kobe University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-4-7] The Possibility of Quantized Conductance at Temperatures above 4.2K in Bulk Si MOSFETs

Kan TAKEUCHI, Dai HISAMOTO, Hisaomi YAMASHITA, Masaaki AOKI (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi VLSI Engineering Corp.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[C-2-1] Plasma Immersion Ion Implantation for Electronic Materials Applications

N. W. Cheung, W. En, J. Gao, S. S. Iyer, E. C. Jones, B. P. Linder, J. B. Liu, X. Lu, J. Min, B. Shieh (1.Plasma Assisted Materials Processing Laboratory Department of Electrical Engineering and Computer Sciences University of California)

1995 International Conference on Solid State Devices and Materials |PDF Download

[C-2-2] Ultra Shallow p+n Junction Formation Using the Solid Phase Diffusion(SPD) through 'a-Si/Thin Barrier Oxide' Layer

Sang Jik Kwon, Byung Gook Park, Jong Duk Lee (1.Dept. of Electronics Engineering, Kyungwon Univ., 2.Inter-Univ. Semicon. Res. Center, Seoul Nat. Univ.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[C-2-3] On the Use of Indium and Gallium as P-Type Dopants in Si 0.1 μm MOSFETs

Serge Biesemans, Stefan Kubicek, Joris VanLaer, Fred Loosen, Luc Geenen, Karen Maex, Kristin DeMeyer (1.ASP division, IMEC)

1995 International Conference on Solid State Devices and Materials |PDF Download

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