[PA-1-1] N2O-Anneal Induced Local Thinning of Regrown Oxide due to Nitrogen Residue at LOCOS Isolation Edges

Chimoon Huang, K. T. Sung, N. C. Peng, M. Chao, Y. Chang, F. C. Shone (1.Macronix International Co., LTD)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PA-1-2] Properties of "Stoichiometric" Silicon Oxynitride Films

LeNian HE, Takao INOKUMA, Seiichi HASEGAWA (1.Department of Electronics, Faculty of Technology, Kanazawa University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PA-1-3] Growth Kinetics of Ultrathin Silicon Dioxide Films Formed by Rapid Thermal Oxidation

Hisashi FUKUDA, Katsunori AKASE, Toshiaki ENDOH, Shigeru NOMURA (1.Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PA-1-4] Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine

W. C. Yeh, R. Ishihara, S. Morishita, M. Matsumura (1.Department of Physical Electronics, Tokyo Institute of Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PA-1-5] Excellent Quality of SiO2 Dielectric Film Prepared by Room-Temperature Ion Plating and Its Application to Thin-Film Transistors

Tai-Ju Chen, Ching-Fa Yeh, Ching-Lin Fan, Jiann-Shiun Kao (1.Department of Electronics Engineering & Institute of Electronics, National Chiao-Tung University, 2.Precision Instrument Development Center, National Science Council)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PA-1-6] SiO2 Thin Films Formation by Reactive Evaporation of SiO at a Low Temperature and Its Device Application

T. Sameshima, G. Langguth (1.Tokyo University of Agriculture & Technology, 2.Max-Planck-Institut)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PA-1-7] Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Silicon Surfaces

E. IIJIMA, T. AIBA, K. YAMAUCHI, H. NOHIRA, N. TATE, M. KATAYAMA, T. HATTORI (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 2.Shin-Etsu Handotai Co. Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PA-1-8] Thickness-Deconvolved Structural Properties of Thermally Grown Silicon Dioxide Film

Kenji ISHIKAWA, Hiroki OGAWA, Sumiko OSHIDA, Kaina SUZUKI, Shuzo FUJIMURA (1.Process development division C850, Fujitsu Limited)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-9-1] Atomically Controlled Formation of Dielectric and High Tc Oxide Thin Films by Laser Ablation

Tomoji KAWAI (1.ISIR-Sanken, Osaka University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-9-2] High Dielectric Constant (Ba, Sr)TiO3 Thin Films for ULSI DRAM Application

Yoichi Miyasaka (1.Fundamental Research Laboratories, NEC Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

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