[C-6-3] Specialty Gas Interactions with Various Silicon Surfaces

Yasuyuki Shirai, Masakazu Nakamura, Tadahiro Ohmi (1.Department of Electronics, Faculty of Engineering, Tohoku University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[C-6-4] Large Diameter Epitaxial Wafers for Future ULSI

John MATLOCK (1.Shin-Etsu Handotai-America)

1995 International Conference on Solid State Devices and Materials |PDF Download

[C-6-5] The Control of Sidelobe Intensity with Arrangement of the Chrome Pattern (COSAC) in Halt-Tone Phase-Shifting Mask

S. Kobayashi, N. Oka, K. Watanabe, M. Inoue, K. Sakiyama (1.VLSI Development Laboratories, Tenri IC Group, Sharp Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

[C-6-6] An Amorphous A valanche Photo-Diode with a Large Conduction Band Edge Discontinuity

Shigetoshi SUGAWA, Hiraku KOZUKA, Tadashi ATOJI, Hiroyuki TOKUNAGA, Hisae SHIMIZU, Kazuaki OHMI (1.Device Development Center, CANON INC.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[C-6-7] Double Graded-Gap a-SiC:H P-I-N Thin-Film LED with Composition-Graded N-Layer and Carbon-Increasing P-Layer

Yen-Ann Chen, Jyh-Kuan Chen, Wen-Chin Tsay, Jyh-Wong Hong, Chun-Yen Chang (1.Department of Electrical Engineering, National Central University, 2.Institute of Electronics, National Chiao-Tung University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-6-1] InP HEMT:An Emerging Technology for Millimeterwave Applications

Loi D. NGUYEN (1.Hughes Research Laboratories)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-6-2] Single Voltage Supply High Efficiency InGaAs Pseudomorphic Double-Hetero HEMTs with Platinum Buried Gates

Takuma TANIMOTO, Isao OHBU, Satoshi TANAKA, Hidetoshi MATSUMOTO, Akihisa TERANO, Tohru NAKAMURA (1.Central Research Laboratory, Hitachi Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-6-3] A Buried-Channel WNx/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System

Kazuya NISHIHORI, Atsushi KAMEYAMA, Yoshiaki KITAURA, Yoshiko IKEDA, Masami NAGAOKA, Yoshikazu TANABE, Masakatsu MIHARA, Misao YOSHIMURA, Mayumi HIROSE, Naotaka UCHITOMI (1.ULSI Research Laboratories, Toshiba Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-6-4] Oxidation Using AFM and Subsequent Etching in Water of Inverted-Type δ-Doped HEMT

Masami ISHII, Kazuhiko MATSUMOTO (1.Electrotechnical Laboratory, MITI)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-6-5] Electrical Properties of Ferroelectric Gate HEMT Structures

Shun-ichiro OHMI, Makoto YOSHIHARA, Takeo OKAMOTO, Eisuke TOKUMITSU, Hiroshi ISHIWARA (1.Precision & Intelligence Laboratory, Tokyo Institute of Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

375 results (311 - 320)

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