[D-5-4] 1100 Hours Stable Operation in 0.87-μm InGaP/GaAs LED's on Si Substrates Grown by MOCVD

Takashi EGAWA, Jie DONG, Kou MATSUMOTO, Takashi JIMBO, Masayoshi UMENO (1.Research Center for Micro-Structure Devices, Nagoya Institute of Technology, 2.Nippon Sanso Corporation, Tsukuba Laboratories, 3.Department of Electrical and Computer Engineering, Nagoya Institute of Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-5-5] High Sensitivity Photodetector with Self-Amplification Capability

Hideaki YAMAMOTO, Kenji TANIGUCHI, Chihiro HAMAGUCHI (1.Department of Electronic Engineering, Osaka University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-5-6] Growth and Characterization of Organic Semiconductor Devices: Photodetectors and Light Emitting Diodes (OLEDs)

Christoph ROMPF, Dirk AMMERMANN, Achim BOHLER, Wolfgang KOWALSKY (1.Institut fur Hochfrequenztechnik, TU Braunschweig)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-7-1] Single, Individual Traps at the SiO2/Si Interface in Sub-μm MOSFETs

M. Schulz, H. H. Mueller, U. Schirl (1.Institute of Applied Physics, University of Erlangen-Nurnberg)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-7-2] Time-Dependent Dielectric Degradation (TDDD) Influenced by Ultrathin Oxidation Process

Mikihiro KIMURA, Tadahiro OHMI (1.Department of Electronic Engineering, Tohoku University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-7-3] Impact of Negative-Bias Temperature Instability on the Lifetime of Single-Gate CMOS Structures with Ultrathin(4-6 nm)Gate Oxides

Shigeo OGAWA, Masakazu SHIMAYA, Noboru SHIONO (1.NTT LSI Laboratories, 2.Reliability Center for Electronic Components of Japan (RCJ))

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-7-4] Effect of Nitrogen Profile on Tunnel Oxynitride Degradation with Charge Injection Polarity

Tomiyuki ARAKAWA, Ryoichi MATSUMOTO, Akio KITA (1.VLSI R & D Center and LSI Process Technology Division, Oki Electric Industry Co., Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-8-1] Thermal Budget for Fabricating A Dual Gate Deep-Submicron CMOS with Thin Pure Gate Oxide

Kunihiro Suzuki, Akira Satoh, Takayuki Aoyama, Itaru Namura, Fumihiko Inoue, Yuji Kataoka, Yoko Tada, Toshihiro Sugii (1.Fujitsu Laboratories Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-8-2] New Dielectric Breakdown Model of Local Wearout in Ultra Thin Silicon Dioxides

Kenji OKADA, Satoko KAWASAKI (1.Micro Computer Division, Matsushita Electronics Corp., 2.Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-8-3] Superior Immunity to the Effects of Plasma-Induced Charging Damage on the Hot-Carrier Reliability of MOSFET's with NO-nitrided SiO2 Gate Dielectrics

B. W. Min, L. K. Han, M. Bhat, T. H. Cho, A. B. Joshi, R. Mann, L. Chung, D. L. Kwong (1.Microelectronics Research Center Department of Electrical & Computer Engineering and Materials Science & Engineering The University of Texas at Austin, 2.Rockwell Telecommunications)

1995 International Conference on Solid State Devices and Materials |PDF Download