[PC-2-5] All-Perovskite Ferroelectric/Semiconductor Field Effect Transistor

Yukio WATANABE, Mitsuru TANAMURA, Yasuaki MATSUMOTO (1.Mitsubishi Chemical Yokohama Research Center)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-3-1] Suppression of Resistance Increase in Al/W Interconnects by N2 Plasma Treatment

Mitsuru Sekiguchi, Toyokazu Fujii, Michinari Yamanaka (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., 2.Kyoto Research Laboratory, Matsushita Electronics Co.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-3-2] An Efficient Improvement for Barrier Effect of W-Filled Contact

Wen-Kuan Yeh, Ting-Chang Chang, Ming-Hsing Tsai, Sheng-Hsiung Chen, Kuang-Yang Chan, Mao-Chich Chen Mou-Shiung Lin (1.Department of Electronics Engineering, National Chiao Tung University and National Nano Device Laboratory, 1001 University Rd., 2.Taiwan Semiconductor Manufacturing Company)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-3-3] Comparison of CVD and PVD TaN as Diffusion Barriers for Al and Cu Metallization

S. C. Sun, M. H. Tsai, C. E. Tsai, H. T. Chiu (1.National Nano Device Laboratory and Department of Electronics Engineering, 2.Institute of Applied Chemistry National Chiao Tung University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-3-4] Optimization of Contact Process with Monte-Carlo Study for Advanced CMOS Devices

Hirofumi Sumi, Toshiharu Yanagida, Hiroshi Yamada, Yuichi Miyamori, Yukiyasu Sugano, Satoru Kishida, Heizo Tokutaka (1.MOS LSI Division, Semiconductor Company, Sony Corp., 2.Department of Electrical and Electronic Engineering, Tottori University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-3-5] Direct Formation of Selective CVD-Al Contact Plug on Titanium Silicide Obtained by Silicidation of Titanium Including Nitrogen

Takayuki KOMIYA, Youichi TAKAI, Hiroshi SHINRIKI (1.Technology Development Center, LSI Division, Kawasaki Steel Corp.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-3-6] Effects of Y or Gd Addition on the Structure of Al Thin Films

Shinji Takayama, Naganori Tsutsui (1.IBM Research, Tokyo Research Laboratory, IBM Japan, Ltd., 2.International Test and Engineering Services Co., Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-3-7] New Characterization of TiSi2 Local Wiring Technology and Its Impact on Low Power / High Speed Quarter Micron CMOS

Atsushi OHTOMO, Jiro IDA, Nobuo OZAWA, Makiko KAGEYAMA, Hiroshi ONODA (1.VLSI Research and Development Center, OKI Electric Industry Co., Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-3-8] High-Speed and Low-Power Interconnect Technology for Sub-Quarter-Micron ASICs

Masafumi MIYAMOTO, Toshifumi TAKEDA, Takeshi FURUSAWA (1.Advanced Device Development Dept., Semiconductor Development Center, Hitachi Ltd., 2.Process Engineering Development Dept., Semiconductor & IC Division, Hitachi Ltd., 3.ULSI Research Dept., Central Research Laboratory, Hitachi Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-3-9] Electrochemical Analyses for Corrosion Mechanism of Al-Cu Alloy Thin-Films

Nobuo Aoi, Akemi Kawaguchi, Shuichi Mayumi, Kousaku Yano (1.Semiconductor Research Center, Matsushita Electric Industrial Co. Ltd., 2.Matsushita Electronics Corporation, Kyoto Research Laboratory)

1995 International Conference on Solid State Devices and Materials |PDF Download

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