[D-8-2] Simulation and Observation of the Step Bunching Process Grown on GaAs (001) Vicinal Surface by Metalorganic Vapor Phase Epitaxy

J. Ishizaki, K. Ohkuri, T. Fukui (1.Research Center for Interface Quantum Electronics, Hokkaido University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-8-3] Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations

Masao TAMURA, Tohru SAITOH, Tokuo YODO (1.Optoelectronics Technology Research Laboratory)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-8-4] Impurity-Free Disordering of InGaAs/InGaAlAs/InP Quantum Wells by Dielectric Thin Cap Films and Its In-Plane Spatial Resolution

S. SUDO, H. ONISHI, Y. NAKANO, Y. SHIMOGAKI, K. TADA, M. J. MONDRY, L. A. COLDREN (1.Dept. of Electronic Engineering, University of Tokyo, 2.Optoelectronics Technology Center, University of California)

1995 International Conference on Solid State Devices and Materials |PDF Download

[D-8-5] Controlled Disordering of Compressively Strained InGaAsP Multiple Quantum Wells under SiO:P Encapsulant and Application to Laser-Modulator Integration

A. Hamoudi, E. V. K. Rao, Ph. Krauz, A. Ramdane, A. Ougazzaden, D. Robein, H. Thibierge (1.France Telecom/CNET/PAB, Laboratoire de Bagneux)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L1-L1] A 4:1 MUX Circuit Using 1/4-Micron CMOS/SIMOX for High-Speed and Low-Power Applications

S. YASUDA, Y. OHTOMO, M. INO, Y. KADO, H. INOKAWA, T. TSUCHIYA (1.NTT LSI Laboratories)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L1-L2] Effects of Implanted Dopants in the LDD Region on the Short Channel Effect of a Deep Sub-Micron MOS Device

B. J. Koo, D. J. Jung, J. W. Park, N. S. Kang, T. E. Shim, M. Y. Lee (1.Basic Research Team, Memory Device Business, Samsung Electronics, Co.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L1-L3] A High Performance p-Channel Transistor: β-MOS FET

Kanji Yoh, Ryouji Koizumi, Naotaka Hashimoto, Shuji Ikeda (1.Research Center for Interface Quantum Electronics, Hokkaido University, 2.Semiconductor & Integrated Circuits Division, Hitachi Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L1-L4] Polymide Waveguide as Optical Interconnection for multi-Chip Module Application

T. Matsumoto, Y. Kudoh, T. Yonezawa, M. Koyanagi (1.Dept. of Machine Intelligence and System Engineering, Tohoku University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L1-L5] Light-Emitting Porous Silicon Prepared by Pulsed Anodic Etching

Xiaoyuan Hou, Honglei Fan, Fulong Zhang, Mingren Yu, Xun Wang (1.Surface Physics Laboratory, Fudan University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L1-L6] New Methods for ultra-Shallow Boron Doping by Using Plasma, Plasma-Less and Sputtering

B. Mizuno, H. Nakaoka, M. Takase, A. Hori, I. Nakayama, M. Ogura (1.Semiconductor Research Center and Production Engineering Lab, Matsushita Electric Industrial, Co., Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

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