Si SOI Structures Grownf80by the UHV-CVD Method

T. Kimura, A. Sengoku, M. Ishida (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L1-L8] Determination of Chemical Shift in Si2p Core-Level Spectra for Silicon-Hydrogen Bonds on Chemically-Cleaned Su(100) and Si(111) Surfaces

C. H. Bjorkman, J. L. Alay, H. Nishimura, M. Fukuda, T. Yamazaki, M. Hirose (1.Research Center for Integrated Systems, Hiroshima University, 2.Department of Electrical Engineering, Hiroshima University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L1-L9] ULSI Technology Evaluation and Precautions: A Novel View of SiO2 Layer Properties in the nano- and Sub-Nanoscale

O. V. Romanov, I. A. Kotov, Hee-Chul Lee (1.St. -Petersburg Univ., 2.El. Eng. Dept., KAIST)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-L1-L1] Raman Scattering Characterization of the Crystalline Qualities of ZnSe Films Grown on S-Passivated GaAs(100) Substrates

J. Wang, X. H. Liu, Z. S. Li, Z. Ling, X. Y. Hou, Xun Wang (1.Surface Physics Laboratory, Fudan University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L2-L1] Proposal of a Technique to Detect Sub-Surface Hot Electrons with a Scanning Probe Microscope

F. Vazquez, K. Furuya, D. Kobayashi (1.Department of Electrical and Electronic Engineering, Tokyo Institute of Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L2-L2] Observation of the Electron Reflection from N-/N+ Junction in GaAs by Resonant Tunneling through Pseudoquantum Well in Single Barrier Heterostructure

Yu. V. Dubrovskii, T. G. Andersson, Yu. N. Khanin, I. A. Larkin, E. E. Vdovin (1.Institute of Microelectronics Technology, Russian Academy of Science, 2.Department of Physics, Chalmers University of Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L2-L3] Reconstruction Dependent Electron-Hole Recombination on GaAs(001) Surfaces

Hiroshi Yamaguchi, Kiyoshi Kanisawa, Yoshiji Horikoshi (1.NTT Basic Research Laboratories)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L2-L4] Ordering Phenomenon in Highly Doped III-V Semiconductor materials

V. A. Bogdanova, V. I. Dubovic, V. V. Prudnikov, N. A. Semikolenova (1.Sensor Microelectronics Institute of Siberian Branch of RAS)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L2-L5] Ruduction of Threading Dislocation Density in InP-on-Si Heteroepitaxy with Strained Short-Periods Superlattices

K. Samonji, Y. Takagi, H. Yonezu, K. Iwaki, N. Ohshima, J. K. Shin, K. Pak (1.Department of Electrical & Electronic Engineering, Toyohashi University of Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PD-L2-L6] The Application of CVD SiO2 and PECVD Si3N4 in Fabrication and Passivation of Long-Wavelength HgCdTe Photodiode Arrays

V. M. Emeksuzyan, L. N. Romashko, G. Y. Saleeva, T. I. Zakharyash, N. Kh. Talipov, V. V. Vasil'ev, V. N. Ovsyuk (1.Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences)

1995 International Conference on Solid State Devices and Materials |PDF Download

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