[S-V-9] Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers

Takeshi UENOYAMA, Masakatsu SUZUKI, Satoshi KAMIYAMA (1.Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 2.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-V-10] MBE Growth and Properties of GaN, AlxGa1-xN and AlN on GaN/SiC Substrates

Shizuo FUJITA, M. A. L. JOHNSON, W. H. ROWLAND, JR., W. C. HUGHES, Y. W. HE, N. A. EL MASRY, J. W. COOK, JR., J. F. SCHETZINA, J. REN, J. A. EDMOND (1.North Carolina State University, 2.Cree Research, Inc.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-9-1] Excitonic Emissions in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Epitaxial Growth

K. Okada, A. Kai, Y. Yamada, T. Taguchi, H. Taniguchi (1.Department of Electrical and Electronic Engineering, Yamaguchi University, 2.Fujisawa Laboratory, Tokuyama Corp.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-9-2] MBE Growth and Properties of ZnO on Sapphire and SiC Substrates

M. A. L. Johnson, Shizuo Fujita, W. H. Rowland, Jr., W. C. Hughes, J. W. Cook, Jr., J. F. Schetzina, J. Ren, J. A. Edmond (1.North Carolina State University, 2.Cree Research, Inc.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-9-4] Room-Temperature Excitonic Optical Bistability in ZnSe-ZnCdSe/CaF2 Multiple Quantum Wells

Y. M. Lu, L. C. Chen, Z. P. Guan, D. Z. Shen, X. W. Fan (1.Changchun Institute of Physics, Academia Sinica)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-9-5] Effects of GaAs Surface Pretreatment and Post-Growth Annealing on Interface Properties of MBE-ZnSe/GaAs(Sub.) System

Yuji YAMAGATA, Takayuki SAWADA, Kazuaki IMAI, Isao TSUBONO, Kazuhiko SUZUKI (1.Department of Applied Electronics, Hokkaido Institute of Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-9-6] Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment

M. Onomura, S. Saito, J. Rennie, Y. Nishikawa, P. J. Parbrook, M. Ishikawa, G. Hatakoshi (1.Materials and Devices Research Laboratories, Toshiba Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-9-7] Operating Current Dependence of CdZnSe/ZnMgSSe Laser Diodes on Band Gap and Carrier Concentration of P-Type Cladding Layer

Shin'ichi Nakatsuka, Jun Gotoh, Kazuhiro Mochizuki, Akira Taike, Masahiko Kawata, Masayuki Momose (1.Central Research Lab. Hitachi Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[PC-9-8] MOMBE Growth of Nitrogen-Doped p-Type ZnSe

Go SATO, Takahiro NUMAI, Mitsuo HOSHIYAMA, Ikuo SUEMUNE, Hideaki MACHIDA, Norio SHIMOYAMA (1.Research Institute for Electronic Science, Hokkaido University, 2.Trichemical Laboratory)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-VI-1-1] InAs-GaAs Quantum Dot Lasers: in Situ Growth, Radiative Lifetimes and Polarization Properties

D. Bimberg, N. N. Ledentsov, N. Kirstaedter, O. Schmidt, M. Grundmann, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maximov, P. S. Kop'ev, Zh. I. Alferov, S. S. Ruvimov, U. Gosele, J. Heydenreich (1.Institut fur Festkorperphysik, 2.A. F. Ioffe Physical-Technical Institute, 3.Max-Plank-Institut fur Mikrostrukturphysik)

1995 International Conference on Solid State Devices and Materials |PDF Download