[S-I-2-3] A New Low-Temperature Oxidation Technique by Gas Cluster Ion Beams

Makoto AKIZUKI, Jiro MATSUO, Satoru OGASAWARA, Mitsuaki HARADA, Atsumasa DOI, Isao YAMADA (1.Microelectronics Research Center, SANYO Electric Co., Ltd., 2.Ion Beam Engineering Experimental Laboratory, Kyoto University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-2-4] Low-Thermal-Budget Process-Controlled Monolayer Level Incorporation of Nitrogen into Ultra-Thin Gate Dielectric Structures: Applications to MOS Devices

Gerald LUCOVSKY, David R. LEE, Sunil V. HATTANGADY, Hiro NIIMI, Chris PARKER, John R. HAUSER (1.North Carolina State University, Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering)

1995 International Conference on Solid State Devices and Materials |PDF Download

[S-I-2-5] Clarification of Nitridation Effect on Oxidation Methods

T. Kuroi, S. Shirahata, Y. Okumura, S. Shimizu, A. Teramoto, M. Anma, M. Inuishi, T. Hirao (1.ULSI Laboratory, Mitsubishi Electric Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] Semiconductor Silicon Carbide for Power Electronic Application

Hiroyuki MATSUNAMI, Akira ITOH (1.Department of Electronic Science and Engineering, Kyoto University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] Super-β Bipolar Transistor Equivalent in CMOS Technology

Gyudong Kim, Min-Kyu Kim, Wonchan Kim, Abdesselam Bouzerdoum (1.Department of Electronics Engineering, Seoul National University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] CVD-EPI MOS Transistors with a 65 nm Vertical Channel

F. Hofmann, W. H. Krautschneider, L. Risch, H. Schaefer (1.Siemens AG, Corporate Research and Development, ZFE T MEI)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-1-4] Effects of Pixel Electrode Structure on Image Lag of STACK-CCD Image Sensor

Eiji OBA, Ryouhei MIYAGAWA, Hisanori IHARA, Michio SASAKI, Hirofumi YAMASHITA, Hiroyuki TANGO, Okio YOSHIDA, Sohei MANABE (1.ULSI Research Laboratories, Research and Development Center, Toshiba Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-1-5] Polysilicon Thin Film Transistors with PN Junction Gate

Byung-Hyuk Min, Cheol-Min Park, Min-Koo Han (1.Dept. of Electrical Engineering, Seoul National University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-1-6] In-Situ Doped CMOS Polysilicon Thin Film Transistors

Byung-Hyuk Min, Cheol-Min Park, Byung-Seong Bae, Min-Koo Han (1.Dept. of Electrical Engineering, Seoul National University, 2.Special Marketing Team/Poly PJT, Samsung Electronics Co.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-2-1] A Novel High Density EEPROM Cells Using Poly-Gate Hole (POLE) Structure Suitable for Low Power Applications

Masataka Takebuchi, Jun-ichiro Noda, Daisuke Tohyama, Shu Ueno, Kanji Osari, Kuniyoshi Yoshikawa (1.Toshiba Corp., 2.Toshiba Microelectronics Corp.)

1995 International Conference on Solid State Devices and Materials |PDF Download

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