[PB-1-4] Bistable Locking of Single-Electron Tunneling Junctions for Digital Circuitry

R. A. Kiehl, T. Ohshima (1.Fujitsu Laboratories Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-3-1] Low-Voltage and Power CMOS Technology

Masakazu Kakumu, Masaaki Kinugawa, Kazunari Ishimaru, Hisato Oyamatsu (1.Semiconductor Device Engineering Laboratory, Toshiba Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-3-2] A New Triple-Well Process to Accomplish a Lower Vth and a Low Cost for Low Power-Supply Voltage VLSI

J. Mitani, K. Itabashi, M. Nagase, M. Kawano, T. Ema (1.Memory Process Integration Dept., Fujitsu Ltd.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-3-3] Impact of Nitrogen Implantation on Highly Reliable Sub-Quarter Micron LDD MOSFETs

S. Shimizu, T. Kuroi, S. Kusunoki, Y. Okumura, M. Inuishi, T. Hirao (1.ULSI Laboratory, Mitsubishi Electric Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-3-4] A High Performance 0.15μm Single Gate CMOS Technology

T. Yoshitomi, M. Saito, T. Ohguro, M. Ono, H. S. Momose, H. Iwai (1.ULSI Research Laboratories, Toshiba Corporation)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-3-5] Tungsten Gate Technology for Quarter-Micron Application

Hiromasa NODA, Hideyuki SAKIYAMA, Yasushi GOTO, Tokuo KURE, Shin'ichiro KIMURA (1.Semiconductor & Integrated Circuits Div., Hitachi, Ltd., 2.Central Research Laboratory, Hitachi, Ltd., 3.Hitachi VLSI Engineering Corp.)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-4-1] Monte Carlo Simulations of Impact Ionization Feedback in Sub-Micron MOSFET Technologies

Jeff D. Bude (1.AT&T Bell Laboratories)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-4-2] Novel Impact Ionization Model for Device Simulation Using Generalized Moment Conservation Equations

Ken-ichiro SONODA, Mitsuru YAMAJI, Kenji TANIGUCHI, Chihiro HAMAGUCHI (1.Department of Electronic Engineering, Osaka University)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-4-3] Characteristics of Conductivity Modulated Polysilicon Thin Film Transistors

Anish Kumar K. P., Johnny K. O. SIN (1.Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology)

1995 International Conference on Solid State Devices and Materials |PDF Download

[B-4-4] Anomalous Capture and Emission by Individual Si-SiO2 Interface Defects in Advanced Self-Aligned Bipolar Transistors

J. -Q. LU, S. SCHOTTL, F. KOCH, R. MAHNKOPF, H. KLOSE (1.Physik-Dept. E16, Technical University Munich, 2.Siemens AG, Corporate R&D)

1995 International Conference on Solid State Devices and Materials |PDF Download

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