[P-7-2] AlGaN UV-B Photodetectors on AlN/sapphire template

Hao Jiang, Takashi Egawa (1.Research Center for Nano-Device and System, Nagoya Institute of Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-7-3] Development of Flexible Electrochromic Device with Thin Film Configuration

Hideo Yoshimura, Tomonori Sakaguchi, Nobuyoshi Koshida (1.Graduate School of Engineering, Tokyo University of Agriculture and Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-7-4] Effect of Temperature on the Bandwidth and Responsivity of Uni-Traveling-Carrier and Modified Uni-Traveling-Carrier Photodiodes

Dong-Hwan Jun, Jae-Hyung Jang, Jong-In Song (1.Dept. of Information and Communications, GIST)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-7-5] The Fabrication of the Double Ring Resonators Semiconductor Laser

M. C. Shih, S.C. Wang, C. W. Liang, M. H. Weng (1.Department of Electrical Engineering, National University of Kaohsiung, 2.National Nano Device Laboratories)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-7-6] AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers

Shoou-Jinn Chang, Ming-Hsien Wu, Hung Hung, Yi-Chao Lin, Hon Kuan, Ray-Ming Lin, Chin-Hsaing Chen (1.Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, 2.Department of Electrical Engineering, Far East College, 3.Department of Electronics Engineering, Chang Gung University, 4.Department of Electronics Engineering, Cheng Shiu University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-7-7] Inverted GaN p-i-n photodiodes with a buried p+/n++ tunneling junction

M. L. Lee, J. K. Sheu, W. C. Lai, S. C. Shei, S. J. Chang (1.Department of Electro-Optical Engineering, Southern Taiwan University of Technology, 2.Institute of Electro-optical Science and Engineering, National Cheng Kung University, 3.Department of Electronic Engineering, National University of Tainan)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-7-8] Optical constants of beta-FeSi2 film on Si substrate obtained from transmittance and reflectance data and origin of Urbach-tail

Hirofumi Kakemoto, Tohru Higuchi, Hajime Shibata, Satoshi Wada, Takaaki Tsurumi (1.Graduate school of science and engineering, Tokyo Institute of Technology, 2.Department of applied physics, Faculty of science, Tokyo Univ. of Science, 3.National Institute of Advanced Industrial Science and Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-7-9] Improved Device Characteristics of InGaAsN Photodetectors Using MIMS Structure

Y. K. Su, W. C. Chen, R. W. Chuang, S. H. Hsu, B. Y. Chen (1.Advanced Optoelectronic Technology Center, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-7-10] Effects of Transparent Conductive Layers on Characteristics of InGaN-Based Green Resonant-Cavity Light-Emitting Diodes

Shih-Yung Huang, Ray-Hua Horng, Wei-Kai Wang, Ting-En Yu, Po-Rung Lin, Dong-Sing Wuu (1.Department of Materials Engineering, National Chung Hsing University, 2.Institute of Precision Engineering, National Chung Hsing University, 3.Institute of Electro-Optics and Materials Engineering, National Formosa University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-7-11] High Reliable Nitride Based LEDs with Internal ESD Protection

C. F. Shen, S. J. Chang, S. C. Shei, C. S. Chang, W. S. Chen, T. K. Ko, Y. Z. Chiou (1.Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University, 2.Department of Electronic Engineering, National University of Tainan, 3.Epitech Technology Corporation, 4.Department of Electronics Engineering, Southern Taiwan University of Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download