InP HEMTs

Liang Wang, Weifeng Zhao, Ilesanmi Adesida (1.Dept. Materials Science & Engineering, 2.Dept. Electrical & Computer Engineering, and, 3.Micro & Nanotechnology Lab Univ. of Illinois)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-1-6] The Gate Length Reducing Process for Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs

Seong-Jin Yeon, Jongwon Lee, Gyungseon Seol, Kwangseok Seo (1.Seoul National Univ., School Of Electrical Engineering and Computer Science)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-2-1] Diamond and GaN-Based Electronics

Erhard Kohn (1.Dept. of Electron Devices and Circuits University of Ulm)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-2-2] C-band GaN-FET Power Amplifiers with 160-W Output Power

Y. Okamoto, A. Wakejima, K. Matsunaga, Y. Ando, T. Nakayama, K. Ota, H. Miyamoto (1.Advanced HF Device R&D Center, R&D Association for Future Electron Devices c/o System Devices Research Laboratories, NEC Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-2-3] GaN-based Direct-coupled FET Logic (DCFL) Digital Circuits Operating at 375℃

Yong Cai, Zhiqun Cheng, Zhenchuan Yang, Chak Wah Tang, Kei May Lau, Kevin J. Chen (1.Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-2-4] Effects of Growth Temperature of a GaN Cap Layer on Electrical Properties of AlGaN/GaN HFETs

Tadayoshi Deguchi, Meiichi Yamashita, Eiji Waki, Atsushi Nakagawa, Hiroyasu Ishikawa, Takashi Egawa (1.Research Laboratory, New Japan Radio Co., Ltd., 2.Research Center for Nano-Device and System, Nagoya Institute of Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-2-5] The High Temperature Thermally Treated SiNX Passivation of AlGaN/GaN HEMT using Remote PECVD

Jin-Cherl Her, Dong-Hwan Kim, Sung-Won Kim, Kyoung-Chul Jang, Jae-Hak Lee, Jae-Eung Oh, Kwang-Seok Seo (1.Seoul Nat’l Univ., EECS/EE., 2.THELEDS Co., LTD., 3.Hanyang Univ. EECS/EE)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-3-1] Performance of open-gate AlGaN/GaN HFET in various kinds of liquids

Takuya Kokawa, Taketomo Sato, Tamotsu Hashizume (1.Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-3-2] Characteristics of a New Resistive-Type Hydrogen Sensor

Ching-Wen Hung, Han-Lien Lin, Huey-Ing Chen, Yan-Ying Tsai, Po-Hsien Lai, Ssu-I Fu, Wen-Chau Liu (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 2.Department of Chemical Engineering, National Cheng-Kung University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-3-3] Modulation of Resistivity of Two-Dimensional Electron Gas in AlGaN/GaN Structure

Yun-Chorng Chang, Jinn-Kong Sheu, Yun-Li Li (1.National Cheng Kung University, Institute of Electro-Optical Science and Engineering, 2.National Taiwan University, Graduate Institute of Electro-Optical Engineering)

2006 International Conference on Solid State Devices and Materials |PDF Download

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