[J-2-3] Workfunction Adjustment Using Thin Metal Film (Ti, Pd) under FUSI Gate Electrode and Laser Annealing

Y. Huang, K. L. Pey, D. Z. Chi, K. K. Ong, P. S. Lee, I. S. Goh (1.Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, 2.Systems on Silicon Manufacturing Co. Pte. Ltd., Singapore, 3.Institute of Material Research & Engineering, Singapore, 4.School of Material Science and Engineering, Nanyang Technological University, Singapore)

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[J-2-4] The first principles calculations of Fermi level pinning in FUSI-PtSi/HfO2/Si system induced by local distortion of HfO2

Minoru Ikeda, Georg Kresse, Masaru Kadoshima, Toshihide Nabatame, Hideki Satake, Akira Toriumi (1.MIRAI, Association of Super-Advanced Electronics Technologies (ASET), 2.Institut fur Materialphysik, Univeisitat Wien, 3.MIRAI-AIST, 4.University of Tokyo)

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[J-2-5] Si-Capped Annealing of HfO2-based Dielectrics for Suppressing Interface Layer Growth and Oxygen Out-Diffusion

Masashi Takahashi, Hideki Satake, Masaru Kadoshima, Arito Ogawa, Kunihiko Iwamoto, Hiroyuki Ota, Toshihide Nabatame, Akira Toriumi (1.MIRAI-ASET, AIST Tsukuba West 7, 2.MIRAI-ASRC, AIST Tsukuba West 7, 3.Department of Materials Engineering, The University of Tokyo)

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[J-3-1] High-resolution RBS analysis of Si-dielectrics interfaces

Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Uematsu, Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara, Heiji Watanabe, Kenji Shiraishi, Toyoshiro Chikyow, Keisaku Yamada (1.Department of Micro Engineering, Kyoto University, 2.NTT Basic Research Laboratories, NTT Corporation, 3.Semiconductor Leading Edge Technologies, Inc., 4.Department of Precision Science and Technology, Osaka University, 5.Institute of Physics, University of Tsukuba, 6.National Institute for Materials Science, 7.Nanotechnology Research Laboratories, Waseda University)

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[J-3-2] Real-Time Observation of Initial Thermal Oxidation on Si(110)-16×2 Surfaces by O1s Photoemission Spectroscopy Using Synchrotron Radiation

Maki Suemitsu, Atsushi Kato, Hideaki Togashi, Atsushi Konno, Yoshihisa Yamamoto, Yuden Teraoka, Akitaka Yoshigoe, Yuzuru Narita (1.Center for Interdisciplinary Research, Tohoku Univ., 2.Japan Atomic Energy Agency, 3.Kyushu Institute of Technology)

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[J-3-3] Nonlinear Al Concentration Dependence of the HfAlOx/Si Conduction Band Offset Studied by Internal Photoemission Spectroscopy

T. Horikawa, A. Ogawa, K. Iwamoto, K. Okada, H. Ota, T. Nabatame, A. Toriumi (1.MIRAI-ASRC, AIST, 2.MIRAI-ASET, 3.Univ. of Tokyo)

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[J-3-4] Electric characteristics of Si3N4 films formed by directly radical nitridation on Si (110) and Si (100) surfaces.

Masaaki Higuchi, Takashi Aratani, Tatsufumi Hamada, Akinobu Teramoto, Takeo Hattori, Shigetoshi Sugawa, Tadahiro Ohmi, Seiji Shinagawa, Hiroshi Nohira, Eiji Ikenaga, Keisuke Kobayashi (1.Graduate School of Engineering, Tohoku University, 2.The New Industry Creation Hatchery Center (NICHe), Tohoku University, 3.Musashi Institute of Technology, 4.JASRI/SPring8)

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[J-5-1] Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET

P.D. Kirsch, M.A. Quevedo-Lopez, S. A. Krishnan, C. Krug, F. S. Aguirre, R. M. Wallace, B. H. Lee, R. Jammy (1.SEMATECH, 2.IBM, 3.Texas Instruments, 4.UT-Dallas Dept. Elect. Eng.)

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[J-5-2] Excellent Leakage Current of Crystallized Silicon-Doped HfO2 Films Down to Sub-nm EOT

Kazuyuki Tomida, Koji Kita, Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

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[J-5-3] Spatial Fluctuation of Electrical properties in Hf-Silicate Film Observed with Scanning Capacitance Microscopy

Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, H. Watanabe, K. Yasutake (1.AIST-NeRI, 2.AIST-Advanced Manufacturing Research Institute, 3.Selete, 4.Osaka Univ.)

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