[P-8-2] Polarization field effect on the electrical and electronic band characteristics at the interface between metal and strained GaN/InGaN layer
2006 International Conference on Solid State Devices and Materials |PDF Download
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2006 International Conference on Solid State Devices and Materials |PDF Download
2006 International Conference on Solid State Devices and Materials |PDF Download
2006 International Conference on Solid State Devices and Materials |PDF Download
2006 International Conference on Solid State Devices and Materials |PDF Download
2006 International Conference on Solid State Devices and Materials |PDF Download
2006 International Conference on Solid State Devices and Materials |PDF Download
2006 International Conference on Solid State Devices and Materials |PDF Download
2006 International Conference on Solid State Devices and Materials |PDF Download
2006 International Conference on Solid State Devices and Materials |PDF Download
2006 International Conference on Solid State Devices and Materials |PDF Download