[A-6-1] Probing carbon nanostructures growth mechanism using an in-situ UHVTEM

Y. L. Foo (1.Institute of Materials Research and Engineering)

2006 International Conference on Solid State Devices and Materials |PDF Download

[A-6-2] High-Sensitive and Label-Free Detection of Biomolecules Using Single-Walled Carbon Nanotube Modified Microelectrodes

Jun Okuno, Kenzo Maehashi, Kazuhiko Matsumoto, Kagan Kerman, Yuzuru Takamura, Eiichi Tamiya (1.The Institute of Scientific and Industrial Research, Osaka University, 2.School of Materials Science, Japan Advanced Institute of Science and Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download

[A-6-3] Electric properties of single-walled carbon nanotube film field effect transistors with various work function electrodes: a comparison between pristine and potassium-encapsulated nanotubes

Hideyuki Maki, Satoru Suzuki, Tetsuya Sato, Koji Ishibashi (1.Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, 2.NTT Basic Research Laboratories, NTT Corporation, 3.Advanced Device Laboratory, The Institute of Physical and Chemical Research (RIKEN))

2006 International Conference on Solid State Devices and Materials |PDF Download

[A-6-4] DNA Aptamer-Based Biosensing of Immunoglobulin E Using Carbon Nanotube Field-Effect Transistors

Taiji Katsura, Kenzo Maehashi, Kazuhiko Matsumoto, Kagan Kerman, Yuzuru Takamura, Eiichi Tamiya (1.The Institute of Scientific and Industrial Research, Osaka University, 2.School of Materials Science, Japan Advanced Institute of Science and Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download

[A-6-5] Surface Potential Measurement of Carbon Nanotube FETs using Kelvin Probe Force Microscopy

T. Umesaka, H. Ohnaka, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani (1.Department of Quantum Engineering, Nagoya University, 2.PRESTO, Japan Science and Technology Agency, 3.Venture Business Laboratory, Nagoya University, 4.Institute of Advanced Research, Nagoya University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[A-7-1] Semiconductor Nanowire Devices for Future Logic and Memory (Invited Paper)

B. Yu, M. Meyyappan (1.Center for Nanotechnology, NASA Ames Research Center)

2006 International Conference on Solid State Devices and Materials |PDF Download

[A-7-2] Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors

Masaharu Kobayashi, Kousuke Miyaji, Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF Download

[A-7-3] High-PVCR Si/Si1-xGex Planer-Type Resonant Tunneling Diode Formed with Phosphorous doped Quadruple-layer Buffer

Hirotake Maekawa, Yoshihiro Sano, Yoshiyuki Suda (1.Graduate School of Engineering, Tokyo University of Agriculture and Technology)

2006 International Conference on Solid State Devices and Materials |PDF Download

[A-7-4] High-Density Floating Nanodots Memory Produced by Cage-Shaped Protein

Kiyohito Yamada, Shigeo Yoshii, Shinya Kumagai, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (1.Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd., 2.Graduate School of Materials Science, Nara Institute of Science and Technology, 3.Core Research for Evolutional Science and Technology, Japan Science and Technology Agency)

2006 International Conference on Solid State Devices and Materials |PDF Download

[A-7-5] Tunnel-coupled double nanocrystalline Si quantum dots integrated into a single-electron transistor

Y. Kawata, M. Khalafalla, K. Usami, Y. Tsuchiya, H. Mizuta, S. Oda (1.Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2.SORST-JST (Japan Science and Technology))

2006 International Conference on Solid State Devices and Materials |PDF Download