[E-10-1] Recent Advances on GaN Power Devices

Tetsu Kachi (1.TOYOTA CENTRAL R&D LABS., INC)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-10-2] Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures

Kazushi Nakazawa, Hiroaki Ueno, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka (1.Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-10-3] High Critical Electric Field Exceeding 8 MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate

Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto (1.NTT Basic Research Laboratories, NTT Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-10-4] High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO2/Si3N4 Gate Insulator

Shuichi Yagi, Mitsuaki Shimizu, Masaki Inada, Hajime Okumura, Hiromichi Ohashi, Yoshiki Yano, Nakao Akutsu (1.National Institute of Advanced Industrial Science and Technology, 2.Tsukuba Laboratory, Taiyo Nippon Sanso Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-10-5] Pnp AlGaN/InGaN/GaN Double Heterojunction Bipolar Transistors with Low-Base-Resistance (< 100Ω/sq)

Kazuhide Kumakura, Toshiki Makimoto (1.NTT Basic Research Laboratories, NTT Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[E-10-6] A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs

Young-Hwan Choi, Min-Woo Ha, Jiyong Lim, Min-Koo Han (1.School of Electrical Eng. & Computer Science #50, Seoul National University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-1-1] Overview and Future Challenge of FeRAM Technologies

Y. Kato, Y. Kaneko, H. Tanaka, K. Kaibara, K. Isogai, Y. Shimada (1.Semiconductor Device Research Center, Matsushita Electric Industrial Co., Ltd, 2.ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-1-2] Full-Bit Functional, High-Density 8Mb 1T-1C FRAM Embedded Within a Low-Power 130nm Logic Process

K. R. Udayakumar, T. S. Moise, S. R. Summerfelt, F. G. Celii, G. Shinn, K. Boku, K. Remack, A. Haider, D. Anderson, J. Gertas, Y. Obeng, G. Albrecht, J. S. Martin, J. Rodriguez, B. Khan, S. Aggarwal, N. Schauer, H. McAdams, S. Madan, A. McKerrow, J. Eliason, J. Groat, R. Bailey, G. R Fox, E. Jabillo, J. Walbert (1.Texas Instruments Inc., 2.Ramtron International Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-1-3] Formation of Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2 by Microwave-Excited Plasma Enhanced Metalorganic Chemical Vapor Deposition

Ichirou Takahashi, Kiyoshi funaiwa, Keita Azumi, Satoru Yamashita, Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University, 2.Graduate School of Engineering, Tohoku University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-1-4] Robust 2-D Stack Capacitor Technologies for 64Mb 1T1C FRAM

J. Y. Jung, H. J. Joo, J. H. Park, S. K. Kang, H. S. Kim, D. Y. Choi, J. H. Kim, Y. S. Lee, Y. M. Kang, S. Y. Lee, H. S. Jeong, Kinam Kim (1.Advanced Technology Development 2 Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co. Ltd.)

2006 International Conference on Solid State Devices and Materials |PDF Download