[P-6-3] Influence of T-gate shape on the device characteristics in SiN-assisted 0.12um AlGaAs/InGaAs PHEMT

Hokyun Ahn, Jong-Won Lim, Hong-Gu Ji, Woo-Jin Chang, Jae-Kyoung Mun, Haecheon Kim (1.RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-6-4] Auger Effect of Hole Accumulation on Characteristics of InAlAs/InGaAs HEMTs

Hirohisa Taguchi, Hiroaki Murakami, Mashashi Oura, Tsutomu Iida, Yoshifumi Takanashi (1.Department of Materials Science and Technology, Faculty of Industrial Science and Technology Tokyo University of Science)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-6-5] Pt Buried Gate E-pHEMT with High VG.ON and Reduced Surface Trap Effects

Kyoungchul Jang, Gyungseon Seol, Sungwon Kim, Jincherl Her, Jaehak Lee, Kwangseok Seo (1.Seoul National Univ., School Of Electrical Engineering and Computer Science, 2.Theleds Co., LTD.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-6-6] Direct Calculation of Source Parasitic Resistance in AlGaAs/GaAs HEMTs

Hiroshi Saito, Shuichi Ito, Masaaki Kuzuhara (1.Department of Electrical and Electronics Engineering, University of Fukui)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-6-7] Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In0.3Ga0.7As0.99N0.01(Sb) Dilute Channel

Ke-Hua Su, Wei-Chou Hsu, Ching-Sung Lee, Yu-Shyan Lin, Po-Jung Hu, Ru-Shang Hsiao, Tung-Wei Chi, Jim-Y Chi (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 2.Department of Electronic Engineering, Feng Chia University, 3.Department of Materials Science and Engineering, National Dong Hwa University, 4.Institute of Electro-Optical Engineering, National Chiao-Tung University, 5.Industrial Technology Research Institute)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-6-8] The GaN based HEMT and Schottky diode with filed plate technology for DC/DC converter

Wen-Kai Wang, Yu-Jung Chang, Cheng-Kuo Lin, Ching-Huao Lin, Yi-Jen Chan (1.Department of Electrical Engineering, National Central University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-6-9] A Size-Dependent Equivalent-Circuit Model of High Performance Near-Ballistic-Transport Photodiode

Y.-S. Wu, D.-M. Lin, F.-H. Huang, W. Y. Chiu, J.-W. Shi, Y.-J. Chan (1.Department of Electrical Engineering, National Central University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-6-10L] High Power Performance of Metamorphic HEMTs using Pd Schottky contacts

Yu-Jen Li, Jia-Shyan Wu, Hsien-Chin Chiu, Yi-Jen Chan (1.Univ. of National Central, Dept. of Electrical Engineering, 2.Univ. of Chang-Gung, Dept. of Electrical Engineering)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-6-11L] Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs

Toshihide Ide, Mitsuaki Shimizu, Shuichi Yagi, Masaki Inada, Guanxi Piao, Yoshiki Yano, Nakao Akutsu, Hajime Okumura, Kazuo Arai (1.Advanced Industrial Science and Technology (AIST), Power Electronics Research Center, 2.Tsukuba Laboratory, TAIYO NIPPON SANSO Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[P-7-1] Lock-in pixel using a Current-assisted photonic demodulator Implemented in 0.6μm Standard CMOS

Ward van der Tempel, Daniel Van Nieuwenhove, Riemer Grootjans, Maarten Kuijk (1.Vrije Universiteit Brussel, Laboratory for Micro- & Photonelectronics (LAMI))

2006 International Conference on Solid State Devices and Materials |PDF Download