[G-2-4] Characterization of Low-k Interconnect Dielectrics by EELS

Yuji Otsuka, Miyako Shimada, Naohiko Kawasaki, Shinichi Ogawa (1.Toray Research Center, Inc., 2.Semiconductor Leading Edge Technologies, Inc.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-2-5] Local Bonding Structure of High-Stress Silicon Nitride Film modified by UV Curing for Strained-Silicon Technology beyond 45nm Node SoC Devices

Yoshihiro Miyagawa, Tatunori Murata, Yukiko Nishida, Takehiro Nakai, Akira Uedono, Nobuyoshi Hattori, Masazumi Matsuura, Koyu Asai, Masahiro Yoneda (1.Process Technology Development Division, Renesas Technology Corp., 2.Institute of Applied Physics, University of Tsukuba)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-7-1L] The structural origin of determining the coefficient of thermal expansion for porous silica low-k films

Masahiro Yamaji, Nobuhiro Hata, Takahiro Nakayama, Yoshinori Shishida, Yasuyoshi Hyodo, Takamaro Kikkawa (1.Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 2.MIRAI-ASRC, AIST, 3.MIRAI-Association of Super-Advanced Electronics Technologies, 4.Hiroshima University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-7-2] CuAl Alloy Interconnects as a Solution to the Trade-off between Reliability and Defect Density

T. Furusawa, D. Kodama, H. Miyazaki, M. Matsumoto, J. Izumitani, H. Matsumoto, S. Fukui, K. Hashimoto, S. Tawa, M. Okada, K. Tomita, Y. Nagaki, Y. Minoura, A. Ishii, N. Amou, K. Mori, K. Maekawa, N. Suzumura, K. Honda, Y. Hirose, A. Osaki (1.Renesas Technology Corp., 2.Renesas Semiconductor Engineering Corp., 3.LTec Corp.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-7-3] Shear Stress Analyses in Chemical Mechanical Planarization Processing with Cu/porous low-k Structure

Masako Kodera, Yoshihiro Mochizuki, Akira Fukuda, Hirokuni Hiyama, Manabu Tsujimura (1.Process and Manufacturing Engineering Center, Toshiba Semiconductor Company, 2.Ebara Research Corp., 3.Ebara Corp.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-7-4] Effects of Oxidizer in Metal CMP Slurry on Open Circuit Potential Change during Metal Polishing

Shohei Shima, Shintaro Kamioka, Shingo Yasuda, Hidekazu Nagano, Yutaka Wada, Katsuhiko Tokushige, Akira Fukunaga, Manabu Tsujimura (1.Ebara Corporation, Precision Machinery Company, Semiconductor Equipment Division)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-7-5] Ionic Conduction Leakage Current in Porous Silica Films

Yasuhisa Kayaba, Kazuo Kohmura, Takamaro Kikkawa (1.Research Center for Nanodevices and Systems, Hiroshima University, 2.Mitsui Chemicals, Inc. Catalyst Science Laboratory Heterogeneous Catalysis Group)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-8-1] Challenges of Cu Metalliization for 45nm and beyond

M. H. Tsai (1.TSMC)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-8-2] Defects in Electroplated Cu and their Impact on Stress Migration Reliability

A. Uedono, T. Suzuki, T. Nakamura, T. Ohdaira, R. Suzuki (1.Institute of Applied Physics, University of Tsukuba, 2.Semiconductor Technology Academic Research Center (STARC), 3.National Institute of Advanced Industrial Science and Technology (AIST))

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-8-3] Nondestructive characterization of dielectric stack structures by laser-pulse-generated surface acoustic wave analysis

Toshinori Takimura, Nobuhiro Hata, Yoshinori Shishida, Shinichi Chikaki, Takamaro Kikkawa (1.Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Science and Technology (AIST), 2.Millennium Research for Advanced Information Technology (MIRAI)-ASRC, AIST, 3.MIRAI-Association of Super Advanced Electronics Technologies (ASET), 4.Research Center for Nanodevices and Systems, Hiroshima U.)

2006 International Conference on Solid State Devices and Materials |PDF Download