[F-9-3] Examination of Performance Improvement in Dopant Segregated Schottky MOSFETs; Short Channel Effects, Carrier Velocity and Parasitic Resistance

Yoshifumi Nishi, Atsuhiro Kinoshita, Junji Koga (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[F-9-4] Study on Carrier Transport Limited by Coulomb Scattering due to Charged Centers in HfSiON MISFETs

Takamitsu Ishihara, Ryosuke Iijima, Mariko Takayanagi, Hiroyoshi Tanimoto, Masato Koyama (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, 2.Advanced CMOS Technology Dept., Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-1-1] Carbon Nanotube Via Technologies for Advanced Interconnect Integration

Mizuhisa Nihei, Akio Kawabata, Takashi Hyakushima, Shintaro Sato, Tatsuhiro Nozue, Daiyu Kondo, Hiroki Shioya, Taisuke Iwai, Mari Ohfuti, Yuji Awano (1.MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.), 2.Fujitsu Limited, 3.Nanotechnology Research Center, Fujitsu Laboratories Ltd.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-1-2] Ti-barrier Metal for Robust and Reliable 45nm Node Porous Low-k/Copper Interconnects

K. Higashi, H. Yamaguchi, T. Yosho, A. Sakata, S. Omoto, S. Yamashita, T. Fujimaki, Y. Enomoto, N. Matsunaga, H. Shibata (1.Center for Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation, 2.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 3.System LSI Division I, Semiconductor Company, Toshiba Corporation, 4.Semiconductor Technology Development Group, Semiconductor Business Unit, Sony Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-1-3] Key mechanisms for improved EM lifetime of CoWP capped Cu interconnects

Yumi Kakuhara, Naoyoshi Kawahara, Kazuyoshi Ueno, Noriaki Oda (1.NEC Electronics Corporation, Advanced Device Development Division, 2.Shibaura Institute of Technology, Dept. of Electronic Engineering)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-1-4] A MOCVD TiSiN/Ta Barrier Metal for Improved EM Performance and Low Via/line Resistance using Direct Contact Via (DCV) Process for Sub-65 nm Technology

H. C. Lee, S. J. Joo, I. C. Baek, C. Shim, J. H. Hong, J. W. Han, K. H. Kim, Y. M. Kim (1.Advanced nano-tech development Division, Dongbu Electronics, 2.School of Electrical Engineering, Hongik University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-1-5] Modeling and Characterization of the On-chip Interconnects

R. Kumar, S. C. Rustagi, Sheng Sun, K. Mouthaan, T. K. S. Wong (1.Institute of Microelectronic, 2.Department of Electrical & Computer Engineering, National University of Singapore, 3.School of Electrical & Electronic Engineering, Nanyang Technological University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-2-1] Design of New Ultra Low-dielectric Materials and Characterization

D. Y. Yoon, H. W. Ro, E. S. Park, J. H. Park, J. H. Shim, J.-K. Lee, K. Char, H.-W. Rhee, H. J. Lee, C. Soles, D. W. Gidley (1.Department of Chemistry, Seoul National University, 2.Polymers Division, National Institute of Standards and Technology, 3.Department of Chemical and Biological Engineering, Seoul National University, 4.Department of Chemical Engineering, Sogang University, 5.Department of Physics, University of Michigan)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-2-2] SiOCH Films with Hydrocarbon Network Bonds: First-Principles Investigation

Nobuo Tajima, Tomoyuki Hamada, Takahisa Ohno, Katsumi Yoneda, Seiichi Kondo, Nobuyoshi Kobayashi, Manabu Shinriki, Kazuhiro Miyazawa, Kaoru Sakota, Satoshi Hasaka, Minoru Inoue (1.First Principles Simulation Group, Computational Materials Science Center, National Institute for Materials Science, 2.The FSIS Center for Collaborative Research, Institute of Industrial Science, University of Tokyo, 3.Semiconductor Leading Edge Technologies, Inc., 4.Taiyo Nippon Sanso Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[G-2-3] Nondestructive characterization of temperature-dependent backbone Si-O-Si structure in porous silica films by in-situ Fourier-transform infrared spectroscopy

Syozo Takada, Nobuhiro Hata, Xianying Li, Nobutoshi Fujii, Takahiro Nakayama, Takamaro Kikkawa (1.ASRC, AIST, 2.MIRAI-ASRC, AIST, 3.MIRAI-ASET, 4.RCNS, Hiroshima University)

2006 International Conference on Solid State Devices and Materials |PDF Download