[H-7-4] Using MASTAR as a Pre-SPICE Model Generator for Early Technology Assessment and Circuit Simulation

F. Boeuf, M. Sellier, B. Duriez, E. Josse, A. Pouydebasque, M. Muller, F. Payet, B. Borot, T. Skotnicki (1.STMicroelectronics, 2.Philips Semiconductor)

2006 International Conference on Solid State Devices and Materials |PDF Download

[H-8-1] Strained SiGe-On-Insulator N-MOSFET with Silicon Source/Drain for Drive Current Enhancement

Grace Huiqi Wang, Eng-Huat Toh, Kah-Wee Ang, Chih-Hang Tung, Anyan Du, Yong-Lim Foo, Guo-Qiang Lo, Ganesh Samudra, Yee-Chia Yeo (1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore, 2.Institute of Microelectronics, 3.Institute of Materials Research & Engineering)

2006 International Conference on Solid State Devices and Materials |PDF Download

[H-8-2] Ultra-thin Ge-on-Insulator (GOI) Metal S/D p-channel MOSFETs fabricated by low temperature MBE growth

Takashi Uehara, Hiroshi Matsubara, Satoshi Sugahara, Shinichi Takagi (1.Graduate School of Frontier Science, The Univ. of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF Download

[H-8-3] Reduction of Parasitic Resistance of Self-Aligned Copper Germanide for Germanium p-MOSFETs

Yu-Lin Chao, Jason C. S. Woo (1.Dept. of Electrical Engineering, UCLA, Los Angeles)

2006 International Conference on Solid State Devices and Materials |PDF Download

[H-8-4] Bendable High-Performance Electronic Devices (Active Transistor, High-Density Interconnect and Passive-MIM Capacitors) on Flexible Organic-Substrate

H. Y. Li, L. H. Guo, W. Y. Loh, L. K. Bera, Q. X. Zhang, N. Hwang, E. B. Liao, K. W. Teoh, H. M. Chua, Z. X. Shen, G. Q. Lo, N. Balasubramanian, D. L. Kwong (1.Institute of Microelectronics, 2.School of Physical and Mathematical Sciences, Nanyang Technological University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[H-9-1] Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs

Shin-ichi Takagi, Satoshi Sugahara (1.Graduate School of Frontier Science, The University of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF Download

[H-9-2] Influence of High Dielectric Constant in Gate Insulator on Remote Coulomb Scattering due to Gate Impurities in Si MOS Inversion Layer

Yukio Nakabayashi, Takamitsu Ishihara, Takashi Shimizu, Junji Koga (1.Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation, 2.Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[H-9-3] Experimental Evidence for Invalidity of Matthiessen's Rule for MOS Inversion Layer Mobility Analysis through Hall Factor Measurement

Koji Kita, Hiroshi Irie, Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF Download

[H-9-4] Analytical Model for Phonon-Limited Mobility in n-MOS Inversion Layers on Arbitrarily Oriented and Strained Si Surfaces

Melanie Szczap, Nicolas Cavassilas, Frederic Boeuf, Fabrice Payet, Thomas Skotnicki (1.L2MP, CNRS, UMR 6137, Bat. IRPHE, Technopole de Chateau-Gombert, 2.STMicroelectronics)

2006 International Conference on Solid State Devices and Materials |PDF Download

[H-9-5] Energy relaxation of two-dimensional electrons in Si-MOSFETs : determination of deformational potential constant of conduction band of Si

Kyung-Hwa Park, Kazuhiko Hirakawa, Shinichi Takagi (1.Institute of Industrial Science, University of Tokyo, 2.Graduate School of Frontier Science, University of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF Download