[I-8-3] Inhomogeneous strain in thin silicon films analyzed by grazing incidence x-ray diffraction

H. Omi, T. Kawamura, Y. Kobayashi, S. Fujikawa, Y. Tsusaka, Y. Kagoshima, J. Matsui (1.NTT Basic Research Laboratories, NTT Corporation, 2.Graduate School of Material Science, University of Hyogo, 3.Center for Advanced Science & Technology, Japan)

2006 International Conference on Solid State Devices and Materials |PDF Download

[I-8-4] Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)

Naotaka Tawara, Hiromasa Ohmi, Yoshikazu Terai, Hiroaki Kakiuchi, Heiji Watanabe, Yasufumi Fujiwara, Kiyoshi Yasutake (1.Department of Precision Science and Technology, Graduate School of Engineering, 2.Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University)

2006 International Conference on Solid State Devices and Materials |PDF Download

[I-8-5L] Low temperature (300℃) growth of crystalline/non-crystalline thin Si films by a newly developed single shower dual injection system employing microwave excited high density hydrogen plasma and silicon radicals CVD process.

Toru Takeda, Kouji Tanaka, Masaki Saito, Yoshimichi Kato, Toshirou Tsumori, Herzl Aharoni, Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University, 2.Department of Electrical and Computer Engineering, Ben-Gurion University of the Negev)

2006 International Conference on Solid State Devices and Materials |PDF Download

[J-1-1] Towards metal gate/high-k dielectric integration for high performance CMOS technology

E. Cartier (1.IBM Semiconductor Research and Development Center (SRDC), IBM T. J. Watson Research Center)

2006 International Conference on Solid State Devices and Materials |PDF Download

[J-1-2] Demonstration of Low Vt NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack

C. S. Park, S. C. Song, G. Bersuker, H.N. Alshareef, B. S. Ju, P. Majhi, B.H. Lee, R. Jammy, H. K. Park, M. S. Joo, J. Pu, B. J. Cho (1.SEMATECH, 2.Texas Instruments, 3.Intel, 4.IBM Assignees, 5.GIST, Korea, and, 6.SNDL, NUS, Singapore)

2006 International Conference on Solid State Devices and Materials |PDF Download

[J-1-3] Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures ? Remarkable Advantages of La2O3 over HfO2 ?

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K.-S. Chang, K. Kakushima, Y. Nara, M.L. Green, H. Iwai, K. Yamada, T. Chikyow (1.Advanced Electronic Materials Center, National Institute for Materials Science, 2.Tokyo Institute of Technology, 3.University of Tsukuba, 4.Osaka University, 5.Selete, 6.Chiba University, 7.National Institute of Standards and Technology, 8.Waseda University, 9.Tokyo Electron)

2006 International Conference on Solid State Devices and Materials |PDF Download

[J-1-4] Study of La Concentration Dependent VFB Shift in Metal/HfLaOx/Si Capacitors

Yoshiki Yamamoto, Koji Kita, Kentaro Kyuno, Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2006 International Conference on Solid State Devices and Materials |PDF Download

[J-1-5] High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi2

Akira Takashima, Yukie Nishikawa, Tatsuo Schimizu, Daisuke Matsushita, Masamichi Suzuki, Takeshi Yamaguchi, Noburu Fukushima (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)

2006 International Conference on Solid State Devices and Materials |PDF Download

[J-2-1] Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO2

A. Ohta, H. Yoshinaga, H. Murakami, D. Azuma, Y. Munetaka, S. Higashi, S. Miyazaki, T. Aoyama, K. Kosaka, K. Shibahara (1.Grad. School of AdSM, Hiroshima Univ., 2.Fujitsu Laboratories Ltd., 3.Research Center for Nanodevices and Systems, Hiroshima Univ.)

2006 International Conference on Solid State Devices and Materials |PDF Download

[J-2-2] Pd2Si Fully-Silicided Gate: Kinetics of Silicide Formation and Workfunction Tuning

Takuji Hosoi, Kosuke Sano, Kosei Hosawa, Kentaro Shibahara (1.Research Center for Nanodevices and Systems, Hiroshima University)

2006 International Conference on Solid State Devices and Materials |PDF Download