[B-6-2] Electrical Characteristics of Ge/Si Hetero-Junction Tunnel Field-Effect Transistors and their Post Annealing Effects

M. Kim¹, Y. Wakabayashi¹, R. Nakane¹, M. Yokoyama¹, M. Takenaka¹, S. Takagi¹ (1.The Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[B-6-3] Demonstration of High Electron Mobility in Germanium n-channel Junctionless FETs

S. Kabuyanagi^1,2, T. Nishimura^1,2, K. Nagashio^1,2, A. Toriumi^1,2 (1.The University of Tokyo, 2.JST-CREST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[B-6-4] Very Low EOT and High Mobility Ge pMOSFETs by ALD-formed HfON and in-situ H₂O Plasma Grown GeO₂

L.J. Liu¹, K.S. Chang Liao¹, C.H. Fu¹, T.C. Chen¹, C.C. Li¹, J.W. Cheng¹, C.C. Lu¹, T.M. Lee¹, L.T. Chen¹, S.H. Yi¹, S.K. Chen¹, T.K. Wang¹ (1.National Tsing Hua University (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[B-6-5] Strain engineering for FinFETs

A. Nainani¹ (1.Applied Materials (USA))

2013 International Conference on Solid State Devices and Materials |PDF Download

[C-1-1] Wrapping Carbon Nanotubes in a Gate-All-Around Geometry

A.D. Franklin¹ (1.IBM Research (USA))

2013 International Conference on Solid State Devices and Materials |PDF Download

[C-1-2] Single-Walled Carbon-Nanotube P-N Junction Diode for Optoelectronics

R. Shimizu¹, J. Pu¹, T. Fujimoto¹, Y. Zhang², K. Yanagi³, Y. Iwasa², T. Takenobu¹ (1.Waseda Univ., 2.The Univ. of Tokyo, 3.Tokyo Metropolitan Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[C-1-3] Stretching properties of single-walled carbon nanotube film transistor

H. Hamahata¹, Y. Nobusa¹, K. Yanagi², Y. Iwasa³, T. Takenobu¹ (1.Waseda Univ., 2.Tokyo Metropolitan Univ., 3.Univ. of Tokyo (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[C-1-4] Carbon nanotube transparent conductive films with grid

N. Fukaya¹, D.Y. Kim², S. Kishimoto¹, S. Noda², Y. Ohno¹ (1.Nagoya Univ., 2.Waseda Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[C-1-5] Approach for the Preferential Synthesis of Semiconductor Single-Walled Carbon Nanotubes for Device Application

S. Sakurai¹, M. Yamada¹, H. Nakamura¹, D.N. Futaba¹, K. Hata¹ (1.National Institute of Advanced Industrial Science and Technology (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[C-1-6] Release of Stuck Carbon Nanotube Arm by Resonant Vibration toward Nanorelay Application

T. Kagota¹, A. Nagataki^1,2, K. Takei¹, T. Arie¹, S. Akita¹ (1.Osaka Prefecture Univ., 2.KRI Inc. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

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