[A-5-3] A New 28nm HKMG CMOS Logic OTP Cell

W.Y. Hsiao¹, C.Y. Mei¹, W.C. Shen¹, Y.D. Chih², Y.C. King¹, C.J. Lin¹ (1.National Tsing-Hua Univ., 2.Taiwan Semiconductor Manufacturing Company (Taiwan))

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[A-6-1] Modeling of Transition Metal Oxide Based RRAM Devices

J.F. Kang¹, B. Gao¹, B. Chen¹, P. Huang¹, X.Y. Liu¹ (1.Peking Univ. (China))

2013 International Conference on Solid State Devices and Materials |PDF Download

[A-6-2] Conducting filament engineering by triple-layer RRAM for uniform resistive switching

D. Lee¹, J. Park¹, S. Park², J. Woo¹, E. Cha¹, S. Lee¹, Y. Koo¹, K. Moon¹, J. Song¹, H. Hwang¹ (1.Pohang Univ. of Sci. and Tech., 2.Gwangju Inst. of Sci. and Tech. (Korea))

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[A-6-3] Improvement of Cycling Disturbance and Yield Enhancement of ReRAM using Susceptibility-Aware Write

S.Y. Kim^1,2, J.M. Baek¹, D.J. Seo¹, J.K. Park¹, J.H. Chun¹, K.W. Kwon¹ (1.Sungkyunkwan Univ., 2.Memory Division, Samsung Electronics Corp. Ltd. (Korea))

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[A-6-4] Mb-Class Array Level Investigation of Program Verify Methods for AL_xO_y ReRAM

S.Y. Ning^1,2, T.O. Iwasaki¹, K. Takeuchi¹ (1.Chuo Univ., 2.Univ. of Tokyo (Japan))

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[A-7-1] Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)

K. Shiraishi^1,2, M.Y. Yang¹, S. Kato¹, M. Araidai³, K. Kamiya¹, T. Yamamoto¹, T. Ohyanagi⁴, N. Takaura⁴, M. Niwa⁵, B.M. Kope⁶, Y. Nishi⁶ (1.Univ. of Tsukuba, 2.Nagoya Univ., 3.Univ. of Tsukuba, 4.Low-power Electronics Association & Project, 5.Tohoku Univ., 6.Stanford Univ. (Japan))

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[A-7-2] A Novel Self-rectifying WSixOy Device in a Double-density Architecture for 3D ReRAM

D.Y. Lee¹, E.K. Lai^1,2, W.C. Chien¹, M.H. Lee¹, F.M. Lee¹, Y.C. Chen¹, S.F. Horng², J. Gong², Y.K. Huang¹, H.H. Hsu¹, Y.T. Huang¹, C.C. Yu¹, H.L. Lung¹, K.Y. Hsieh¹, C.Y. Lu¹ (1.Macronix Int'l Corp., Ltd., 2.National Tsing Hua Univ. (Taiwan))

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[A-7-3] Study on nano-scale threshold switching behavior of NbOx film for ReRAM selector application

Y.M. Koo¹, Y.H. Choi¹, E.J. Cha¹, D.S. Lee¹, J.Y. Woo¹, J.H. Song¹, K.B. Moon¹, J.S. Park¹, S.H. Lee¹, H.S. Hwang¹ (1.Pohang Univ. of Sci. and Tech. (Korea))

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[A-7-4] Excellent Reliability and Switching Uniformity of RRAM by Optimizing SET/RESET Pulse Shape to Minimize Current Overshoot

J.H. Song¹, D.S. Lee¹, J.Y. Woo¹, Y.M. Koo¹, E.J. Cha¹, S.H. Lee¹, J.S. Park¹, K.B. Moon¹, H.S. Hwang¹ (1.Pohang Univ. of Sci. and Tech. (Korea))

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[A-8-1] Metal Oxide RRAM For Next Generation Mass Storage: 3D Vertical Architecture and Electrode/Oxide Interface Engineering

H.Y. Chen¹, S. Yu¹, B. Gao², Y. Deng², P. Huang², H. Tian³, Z. Jiang¹, Y. Wu¹, T. Ren³, J.F. Kang², H.S.P. Wong¹ (1.Stanford Univ., 2.Peking Univ., 3.Tsinghua Univ. (USA))

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