[PS-13-21L] Fabrication of graphene devices using resist-free process

M. Nakamura¹, Y. Ohno¹, K. Maehashi¹, K. Inoue¹, K. Matsumoto¹ (1.ISIR, Osaka Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-1] Investigation of Via Degradation Behavior under Thermal Cycling Stress on Power Device

M. Zhang¹, Y. Yoshihisa¹, K. Furuya², Y. Imai¹, K. Hatasako¹, S. Maegawa¹ (1.Renesas Electronics Corp., 2.Renesas Semiconductor Engineering Corp. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-2] Hot carrier effect of a scaled thin-film SOI power MOSFET under constant drain electric field

T. Takasugi¹, S. Matsumoto¹ (1.Kyushu Inst. of Tech. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-3] Floating Field Plate HV-MOSFET by 28nm High-k Metal Gate Process

J.M. Wang¹, P.C. Peng¹, T.L. Lee¹, Y.C. King¹, C.J. Lin¹ (1.National Tsing Hua Univ. (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-4] An Explicit Compact Model for High-Voltage LDMOS

H. Zhou¹, X. Zhou¹, F. Benistant² (1.Nanyang Technological Univ., 2.GLOBALFOUNDRIES Singapore Pte. Ltd. (Singapore))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-5] Role of Carrier Response Delay on Switching Performance of Injection-Enhanced IGBT

T. Yamamoto¹, M. Miyake², H. Kato¹, U. Feldmann², H.J. Mattausch², M. Miura-Mattausch² (1.DENSO Corp., 2.Hiroshima Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-6] Fabrication and Characterization of 1mm Size Diamond SBD

H. Umezawa¹, S. Shikata¹, T. Funaki² (1.AIST, 2.Osaka Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-7] Leakage Current Analysis of Diamond SBDs Operated at High Temperature

H. Umezawa¹, S. Shikata¹ (1.AIST (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-8] High-temperature characteristics of diamond Schottky diodes using various Schottky metals

K. Kawamoto¹, K. Ueda¹, M. Nishiwaki¹, H. Asano¹ (1.Nagoya Univ. (Japan))

2013 International Conference on Solid State Devices and Materials |PDF Download

[PS-14-9] Schottky Barrier Height Modulation of the Metal/4H-SiC Contact by Ultra-Thin Dielectric Insertion Technique

B.Y. Tsui¹, J.C. Cheng¹, L.S. Lee², C.Y. Lee², M.J. Tsai² (1.National Chiao Tung Univ., 2.Industrial Technology Research Institute (Taiwan))

2013 International Conference on Solid State Devices and Materials |PDF Download

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